Microfabrication of silicon nitride film applied in microsensor;

The structure and the property of amorphous silicon nitride film formed by direct current-plasma chemical vapour deposition (DC-PCVD) were analyzed.

0eV laser excitation, six luminescence emission bands of LPCVD silicon nitride film were observed corresponding to 2.

As a kind of mufti- functional materials, silicon nitride thin film is widely used in many fields.

In order to study preparation process and PL mechanism of silicon nitride thin films,the nc-Si(nanocrystalline Si)embedded in silicon nitride thin films were prepared by RF magnetron reaction sputtering technique and thermal annealing.

In the manufacture of microelectronic materials and devices, silicon nitride thin film is used as passivating film, insulation layer and diffusion mask.

Preparation Technologies of LPCVD Silicon Nitride Films;

The silicon nitride films with different Si rich degrees were prepared by plasma enhanced chemical vapor deposition (PECVD) technique at low temperature.

The Internal Stress on silicon nitride thin films that were fabricated by PECVD are studied in this paper.

The hydrogenated amorphous silicon nitride (a-SiN_x:H) thin films silicon nitride thin film has excellent physical and optical properties, and is widely used in optoelectronics, microelectronics, solar cell and so on, especially for the rapid development of the thin film transistor of TFT-LCD in the past 10 years.