1) GaN nanorods
GaN纳米棒
1.
GaN nanorods were successfully synthesized through the reaction of Ga2O3 gel with NH3 at 1 000℃ by a simple and efficient sol-gel process.
采用简单、有效的sol-gel法在1 000℃时通过氧化镓凝胶和氨气反应成功合成了GaN纳米棒。
2.
GaN nanorods were grown by metal organic chemical vapor deposition(MOCVD)with Ni(NO3)2 as the catalyst precursor and trimethyl gallium and high purity blue ammonia as the Ga and N sources,respectively,on Si(111)substrates.
本文分别用三甲基镓和高纯蓝氨作为Ga源和N源,Ni(NO3)2作为催化剂,在Si(111)衬底上制得针尖状GaN纳米棒。
2) GaN nanorods and nanograins
GaN纳米棒和纳米颗粒
1.
At the same time Ga2O3 reactived to NH3 to synthesize GaN nanorods and nanograins.
利用射频磁控溅射法分别溅射ZnO中间层和Ga2O3薄膜到Si(111)衬底上,然后ZnO/Ga2O3薄膜在管式石英炉中常压下通氨气进行氨化,高温下ZnO在氨气气氛中被还原生成Zn而升华,而在不同的氨化时间下Ga2O3和氨气反应合成出GaN纳米棒和纳米颗粒。
3) GaN nanowires
GaN纳米线
1.
Synthesis of GaN nanowires by ammoniating sputtered Ga_2O_3/Co films on Si substrates;
氨化Si基Ga_2O_3/Co薄膜制备GaN纳米线
2.
Synthesis of GaN nanowires through ammoniating Ga_2O_3/Nb thin films;
氨化Ga_2O_3/Nb薄膜制备GaN纳米线
3.
Synthesis of Mg-doped GaN nanowires by Au catalysis on Si substrates
Si基Au催化合成镁掺杂GaN纳米线
4) GaN nanowire
GaN纳米线
1.
Under a non-space confinement condition,GaN nanowires with diameters of about 10-50nm were synthesized on LaAlO 3 substrates by using a simple gas reaction method.
用简单化学反应的方法 ,采用非空间限制的条件 ,成功地在LaAlO3 衬底上制备了GaN纳米线。
5) GaN nanotubes
GaN纳米管
1.
Synthesis of GaN nanotubes through nitriding ZnO/Ga_2O_3 film;
氮化ZnO/Ga_2O_3薄膜合成GaN纳米管
6) GaN nanostrips
GAN纳米带
补充资料：gallium nitride (gan)
CAS：25617-97-4
熔点：800℃
中文名称：氮化镓
英文名称：gallium nitride；gallium mononitride；gallium nitride (gan)；gallium(iii) nitride；galliumnitride
熔点：800℃
中文名称：氮化镓
英文名称：gallium nitride；gallium mononitride；gallium nitride (gan)；gallium(iii) nitride；galliumnitride
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条