1) EA-CVD
EA-CVD方法
1.
In this paper, diamond films have been grown by EA-CVD (Electron assisted Chemical Vapor Deposition) method, and states of nitrogen impurity contained in diamond films were studied by Raman spectroscopy, IR spectroscopy, fluorescence spectroscopy and EPR spectroscopy.
实验结果表明,用EA-CVD方法制备的金刚石膜中氮杂质主要是以Ns0、Ns+、[N-V]0和[N-V]-1的形式存在,没有检测到在天然金刚石和高温高压金刚石中常见的A和B中心形式存在的氮杂质。
2) CVD method
CVD方法
3) CVD method
CVD法
1.
Industrialization synthesis for carbon nanotube by CVD method;
CVD法工业化生产纳米碳管的研究
2.
The function of carrier gas in the synthesis for carbon nanotubes by CVD method;
载气在CVD法制备纳米碳管工艺中的作用
3.
Study on Production (CVD method), Characterization of Carbon Nanotubes and Application in Catalysis;
纳米碳管的制备（CVD法）、表征及其在催化中的应用
4) CVD
CVD法
1.
Synthesis of Multiwall Carbon Nanotubes by CVD Method;
多壁碳纳米管的CVD法制备
2.
Investigation of a new type nano carbon film prepared by high energy plasma assisted CVD;
高能等离子体辅助CVD法新型纳米碳膜的制备及分析
3.
Computer Simulation for the Preparation of Fe 6 5%Si Sheet by the CVD Method;
CVD法制取Fe-6-5% Si薄板的扩散工艺计算机模拟
5) chemical vapor deposition
CVD法
1.
C plasma chemical vapor deposition in industrial set up for deposition of TiN coatings on cemented carbide SC30 was performed.
研究表明 :PCVD法 Ti N系薄膜的微观组织形态明显优于同类的 CVD法薄膜 ,PCVD法薄膜晶粒尺寸细小、均匀 ,形态圆整 ,组织致密 ;CVD法薄膜晶粒形态为多边形 ,尺寸较粗大、不均匀 ,组织致密性差 ;PCVD法 Ti N系薄膜的韧性和结合力等力学性能可达到或优于同类 CVD法薄膜 ;虽然 PCVD法薄膜的氯含量 (约为 2 % )远高于 CVD法薄膜 (约为 0 。
6) CVD
CVD 法
1.
The composite powder is prepared by mixing pure Cu and CNT-Cu composite powder,which is in-situ synthesized by CVD using a novel Ni/Y catalyst supported on copper for the first time.
本文首次采用 CVD 法在以铜为载体的催化剂 Ni/Y 上原位制备了 CNT—Cu 复合粉末,然后将此复合粉末与一定量的纯铜粉研磨混合后采用粉末冶金法制备了 CNTs 增强 Cu 基复合材料。
补充资料：EA
分子式：C2H7N
分子量：45.08
CAS号：75-04-7
性质：密度0.8。熔点-81°C。沸点17°C。折射率1.383-1.385。闪点-17°C。水溶性miscible。
分子量：45.08
CAS号：75-04-7
性质：密度0.8。熔点-81°C。沸点17°C。折射率1.383-1.385。闪点-17°C。水溶性miscible。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条