说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 词典 -> η型GP区
1)  GP zones of η-form
η型GP区
1.
Taking into account the influence on the lattice constant from temperature,the valence electronic structures of GP zones of η-form in the Al-Ag alloy,and the interfacial energy between GP zones of η-form and matrix were calculated by using empirical electron theory in solid and molecules(EET) and the extension of Becker model.
考虑温度对晶格常数的影响,运用固体与分子经验电子理论,对Al-Ag合金的η型GP区的价电子结构进行计算;在此基础上,运用Becker推广模型,对该体系的η型GP区与基体之间的界面能进行预测。
2)  GP zones
GP区
1.
Coherent electron structure of GP zones in Al-Cu alloy and interfacial energy between GP zones and matrix;
Al-Cu合金GP区的价电子结构与界面能
2.
The valence electron structures of the GP zones with model L1_0 in Al-Mg-Si alloy were calculated according to the empirical electron theory(EET) in solid.
运用固体经验电子理论(EET),对Al-Mg-Si合金L10型GP区的价电子结构进行计算。
3.
The valence electron structures of GP zones with model L1_0 in Al-Mg-Si alloy were calculated according to the empirical electron theory(EET) in solid.
运用固体经验电子理论,对A l-Mg-S i合金GP区(L10型)价电子结构进行了计算,结果表明:L10型GP区的最强键与次强键比基体最强键强很多,其主键络骨架对合金键络起到增强作用;而其相邻的(111)晶面上的共价键络较强,使得该面滑移时较基体更困难,从而起到提高合金硬度的作用。
3)  GP zone
GP区
1.
Influence of Li on kinetics of GP zones transformation in Al-Zn-Mg-Cu alloys;
Li对Al-Zn-Mg-Cu系合金GP区转变动力学的影响
2.
Computer simulation of high-resolution electron microscope images of the monolayer Mg-GP,Si-GP zone in aluminum alloy;
铝合金中单层Mg-GP、Si-GP区的高分辨电子显微镜图像的计算机模拟
3.
Analysis of valence electron structure of GP zone in Al-Mg-Si alloyfor strengthening;
Al-Mg-Si合金GP区强化作用的价电子结构分析
4)  GP/CE model
GP/CE模型
5)  GP model
GP模型
1.
According to their physical meanings in GP model, the BJT parameters are obtained first by measuring the volt and current in specified status, and then by processing the data.
各参数根据其在GP模型中的物理意义,测得特定工作状态下的电流、电压值,经计算处理而得到。
2.
Based on the theory of GP model and Process Data,a method of optimizing the key temperature parameters such as XTB and XTI is discussed in this paper,and it s proved in a typical bandgap reference circuit with Hspice simulation which the temperature characteristic of bandgap reference can be improved ranging from-55℃ to 125℃.
以GP模型理论和工艺数据为基础,提出了模型中关键温度参数XTB和XTI的优化方法。
6)  GP large-signal model
GP大信号模型
补充资料:chlorobis(η5-2,4-cyclopentadien-1-y1)vanadium
分子式:(C5H5)2VCl 
CAS号:

性质:又称氯化二茂钒。靛蓝色晶体。熔点206~207℃;。于100℃升华 (0.0133Pa)。溶于四氢呋喃及二氯甲烷。顺磁性。由四氯化钒与环戊二烯基钠反应制得。是制备有机钒的中间物。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条