1) In-doped
In掺杂
1.
Preparation of In-doped ZnO Films on Si Substrates Using Radio Frequency (rf) Reactive Co-sputtering Technique;
用射频溅射技术在硅衬底上制备In掺杂ZnO薄膜
2.
Glancing X-ray diffractometer (XRD) measurement indicated that In-doped sample is ZnO films.
用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征 ,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。
3.
In-doped tin oxide powders were prepared by a chemical coprecipitation process using tin tetrachloride,indium trichloride and ammonia as raw materials.
以四氯化锡、三氯化铟和氨水为原料,采用化学共沉淀法制备了In掺杂SnO2粉体。
2) doped
[英][dəup] [美][dop]
掺杂
1.
Preparation of TiO_2 doped Fe~(3+),La~(3+) and its photocatalytic performance;
镧和铁掺杂纳米TiO_2的制备及其光催化性能
2.
Influence of Co-doped on the Photocatalytic Activity of K_2Nb_4O_(11);
掺杂Co对K_2Nb_4O_(11)光催化性能的影响
3.
Preparation of proton acid doped polyaniline and its gas-sensing properties;
质子酸掺杂聚苯胺的制备及其常温气敏性能
3) dope
[英][dəʊp] [美][dop]
掺杂
1.
Study on the structure of La-doped SrBi_4Ti_4O_(15);
La掺杂SrBi_4Ti_4O_(15)结构影响研究
2.
Research on Nd-doped Barium Titanate Powder Prepared by Hydrothermal Synthesis;
水热法制备钕掺杂BaTiO_3粉体及其介电性能研究
3.
Preparation and fluorescence properties of polyaniline doped with [CrMo_6O_(24)H_6]~(3-);
[CrMo_6O_(24)H_6]~(3-)掺杂聚苯胺材料的制备及荧光性质
4) adulteration
[英][ə,dʌltə'reiʃən] [美][ə,dʌltə'reʃən]
掺杂
1.
Study on adulteration synthesis and gas sensitive properties of nanometer α-Fe_2O_3 powders;
掺杂合成纳米α-Fe_2O_3粉体及其气敏性能研究
2.
Effect of catalytic carrier adulteration on catalytic sensor stability
催化载体的掺杂对催化元件稳定性的影响
3.
The retinyl schiff base salt was synthesized through the adulteration of silver nitrate.
以维生素A醋酸酯为原料,通过水解,利用活性二氧化锰氧化得视黄醛,醛与联苯胺反应合成席夫碱,席夫碱掺杂金属银化合物制得新型视黄基席夫碱盐。
5) dopant
[英]['dəupənt] [美]['dopənt]
掺杂
1.
Effects of Zr and Nb dopants on the microstructure and magnetic properties of Nd_2Fe_(14)B/α-Fe nanocomposite ribbons;
Zr和Nb掺杂对Nd_2Fe_(14)B/α-Fe纳米复合永磁薄带显微组织和磁性能的影响
2.
Phototonus of Chemical And Spectral Sensitization of AgBr Emulsions with Formate as Dopant;
甲酸钠掺杂溴化银乳剂的化学增感和光谱增感感光特性
3.
The Effect of Dopant Sb on the Superhydrophilicity and the Microstructure of the Nanoscale TiO_2 Thin Film;
掺杂Sb对纳米TiO_2薄膜的超亲水性和微结构的影响(英文)
6) doping
[英][dəup] [美][dop]
掺杂
1.
Effect of precipitator on electrocatalysis of rare earth Gd doping SnO_2/Ti electrode;
沉淀剂对稀土Gd掺杂SnO_2/Ti涂层阳极性能的影响
2.
Study on effect of doping on electric property of tantalum wire;
掺杂对钽丝电性能影响的研究
3.
Effect of Gold Doping on the Photocatalytic Activity of the Anatase TiO_2;
Au掺杂方式对锐钛矿TiO_2光催化性能的影响
补充资料：半导体材料掺杂
半导体材料掺杂
doping for semiconductor material
bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条