1) platinum-carbon film
Pt/C薄膜
2) PT/PZT/PT thin film
PT/PZT/PT薄膜
1.
Microforce sensors based on PT/PZT/PT thin films;
PT/PZT/PT薄膜微力传感器
2.
The PZT and PT/PZT/PT thin films were fabricated using sol-gel method and investigated using X-ray diffraction;the leakage current property of them was measured.
运用Sol-Gel(溶胶-凝胶)法制作了PZT和PT/PZT/PT薄膜,采用X射线衍射技术表征了PZT和PT/PZT/PT两种薄膜的成相特征,用半导体参数测试仪测试了PZT和PT/PZT/PT两种薄膜的漏电流。
3) Pt film
Pt薄膜
1.
Strongly (111) oriented Pt films were prepared on SiO_2/Si substrate as the bottom electrodes of PZT films by RF sputtering.
采用射频磁控溅射工艺在SiO2/Si衬底上成功制备了适用于PZT铁电薄膜底电极的180nm厚、沿(111)晶向强烈取向的Pt薄膜。
4) Pt thin film
Pt超薄膜
1.
Local structures of Pt thin films studied by grazing incidence fluorescence XAFS;
掠入射荧光XAFS研究Pt超薄膜的局域结构
5) Pt/WO3 thin film
Pt-WO3薄膜
6) PMN-PT film
PMN-PT薄膜
1.
The article foucs on the effect and mechanisms of phase composition of PMN-PT film that deposited on Pt/Ti/SiO2/Si when the TiO_2 as the seed layer.
鉴于在Pt/Ti/SiO2/Si衬底上制备纯钙钛矿相Pb(Mg1/3Nb2/3O3)-PbTiO3 (PMN-PT)薄膜是制约其应用的主要瓶颈,本文着重研究了TiO_2种子层对以Pt/Ti/SiO2/Si为衬底的PMN-PT薄膜相组成的影响规律与机制。
补充资料：Araldite PT-810
分子式：C12H15N3O6
分子量：297.27
CAS号：2451-62-9
性质：熔点95-98°C。水溶性<0.1 g/100 mL at 20°C。
分子量：297.27
CAS号：2451-62-9
性质：熔点95-98°C。水溶性<0.1 g/100 mL at 20°C。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条