1) band gap
带隙能
1.
Results show that the samples are amorphous and when the power of the W target is 30W,the optical band gap of the film is 2.
02 eV;W靶溅射功率为150 W时,带隙能为2。
2) gap state
带隙能态
1.
The gap state which is caused by dangling bonds and defect in the active layer structer account for carrier trap and impurity segregate.
由于多晶硅薄膜晶粒间界存在大量的悬挂键与缺陷,形成带隙能态,从而导致在有源层中形成载流子陷阱和杂质分凝,本文从微观方面解释悬挂键形成带隙能态的原因极其影响,并给出降低带隙密度的方法—氢化。
3) band-gap energy
带隙能<光>
4) band-gap energy
带隙能量
5) band gap
带隙
1.
Effect of translation group symmetry on phononic band gaps studied by supercell calculation;
超元胞方法研究平移群对称性对声子带隙的影响
2.
Influence of scatterers′ tropism on the band gaps of two-dimension phononic crystal;
散射体的取向对二维声子晶体带隙的影响(英文)
3.
Elastic wave band gap and scattering in phononic crystal;
声子晶体中弹性波带隙与散射
6) bandgap
带隙
1.
Precise Bandgap Voltage Reference and Current Reference;
一种高精度的带隙基准电压源及电流源
2.
Design of low temperature drift bandgap voltage reference and driving circuit;
低温漂带隙基准源及驱动电路设计
3.
A method to estimate the strain state of SiGe/Si by measuring the bandgap;
带隙法测定SiGe/Si材料的应变状态
参考词条
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。