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1)  field electron emission
场致电子发射
1.
Fullerene-like nano-crystalline CN_x films and its characteristics of field electron emission;
类富勒烯纳米晶CN_x薄膜及其场致电子发射特性
2.
The graphite-like film was prepared on silicon substrate by pulsed laser ablation, and the field electron emission from the film was measured.
利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜,以该薄膜为阴极进行了场致电子发射实验。
3.
Prebreakdown was observed under field electron emission experiments from amorphous carbon-polyimide films which were firstly deposited on silicon substrate with high electrical conductivity by pulse laser deposition.
利用脉冲激光沉积技术(PulsedLaserDeposition)首次制备出非晶碳-聚酰亚胺复合薄膜,用其做为冷阴极,观察到其场致电子发射的预击穿现象,预击穿后阈值场强为7V/μm,最大发射电流密度为1。
2)  field emission
场致电子发射
1.
The field emission properties were tested by using a diode structure in a vacuum chamber.
测试了类球状微米金刚石聚晶膜的场致电子发射特性。
2.
The field emission cathode was fabricated with a simple screen printing method.
采用丝网印刷方法将其制备为场致电子发射阴极,将阴极与印刷有荧光粉的阳极板组装成二极结构场致发射显示屏,并进行了场致电子发射特性对比实验。
3.
Recently, a number of experiments and theoretical researches have showed that diamond thin films,especially nanocrystalline diamond thin films, could emit electrons at very low fields, and be well suited for field emission cold cathode which is applied in many field emission applications, such as microwave vacuum devices and field emission displays.
近年来 ,国内外不断有实验和理论研究表明,金刚石薄膜特别是纳米晶金刚石薄膜,在低的开启电压作用下,即可获得很高的场致发射电流密度,具有十分优秀的场致电子发射特性,是一种理想的场致发射阴极材料。
3)  electron field emission
场致电子发射
4)  field emission display (FED)
场致电子发射
1.
Field emission display (FED) colligates the advantages of Cathode Ray Tube(CRT) and the other Flat Panel Display(FPD), which show high brightness and distinguishability, quick response, wide visual angle and operating temperature range, low power consumption and work voltage, excellent color saturation, etc.
场致电子发射显示器(FED)具备了CRT和其它平板显示的优点,在亮度、分辨率、响应速度、视角、功耗、工作电压、色彩饱和度以及工作温度范围等方面都有优良的性能,被认为是最理想的平板显示器之一。
5)  thermionic field emission
热电子场致发射
1.
Based on thermionic field emission,this paper presents an analytical model by approximating the physical model which shows good agreement with experimental data over a wide range of gate bias and of temperature.
本文以陷阱辅助热电子场致发射理论为基础,通过对物理模型的近似处理,提出了一个在大的栅压范围和温度范围内与实验数据吻合较好的多晶硅薄膜晶体管泄漏电流解析模型。
6)  thermionic field emission
场致热电子发射
补充资料:库鲁发射场(见航天器发射场)


库鲁发射场(见航天器发射场)
Kourou Launching Site

Kulu Fashechang库鲁发射场(Kourou Laune址ng site)见航天器发射场。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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