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1)  chemically amplified
化学增幅
1.
A new kind of chemically amplified negative photoresist without crosslinking agent was studied using this co-polymer as the base resin, which was developable in harmless NaOH-.
本文引入单体MAGME合成了具有自交联作用的MAGME、苯乙烯和N ( 4 羟基苯基 )马来酰亚胺的共聚物 ,并以该聚合物为基体树脂 ,研制了一种新型的水显影化学增幅型负性抗蚀剂 ,并初步研究了其光刻工艺条件 。
2.
Studies on water-soluble photoresists during the last decade have been summarized in two parts: traditional photochemical reaction type and chemically amplified type.
本文按传统光化学反应型和化学增幅型两种类型对近10年水溶性光致抗蚀剂的发展状况做了分类总结,并重点介绍了成像反应原理和各体系的优缺点。
2)  chemical amplification
化学增幅
1.
Deep UV lithography operating at 248 nm with use of chemical amplification resists has finally become a production technology.
本文从化学增幅技术的产生,深紫外248nm胶主体树脂及PAG发展历程、溶解抑制剂、存在的工艺问题及解决途径多个方面综述了深紫外248nm胶的发展与进步。
3)  non-Chemically Amplified
非化学增幅
4)  chemical amplification
化学增幅抗蚀剂
5)  chemically amplified photo resist
化学增幅抗蚀
6)  chemically amplified photoresist
化学增幅型抗蚀剂
1.
The development of research for acid proliferation generator (APG) was reviewed and some kinds of APG having application prospect and their reaction mechanism were introduced in detail;the usage of APG in chemically amplified photoresist and UV solidification materials,and CTP were also discussed in this review.
讨论了酸增殖剂在化学增幅型抗蚀剂体系、UV紫外光固化材料、CTP制版中的应用 。
补充资料:增幅
1.增长幅度。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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