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1)  colloid surface negative charge
胶体表面负电荷
2)  negativly charged surface-state effect
负电电荷表面态
3)  negatively charged surface states
负电荷表面态
1.
It is negatively charged surface states to affect the electric field at the gate edge.
我们认为负电荷表面态影响着栅边缘的电场 ,负电荷表面态密度的增大会提高器件的击穿电压 ,这就是 (NH4) 2 Sx 溶液处理可改善GaAsMESFETs击穿电压的原
2.
In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate-drain breakdown voltage as well as the reduction of saturated drain-source current after sulfur passiva.
本论文通过对GaAs MESFET击穿机理和硫钝化机理的研究,用负电荷表面态理论,解释了GaAs MESFET动态击穿特性及硫钝化后栅漏击穿电压增大、源漏饱和电流减小的机理,提出了改善硫钝化稳定性的措施。
4)  surface loading
表面负荷
1.
The influence of air-water ratio,HRT(hydraulic retention time),media-filling rate for biological contact oxidation tank and dosage of flocculating agent,surface loading for flotation tank on pollutants removal was studied.
开展了生物接触氧化/气浮工艺处理微污染源水的中试研究(规模为20 m3/h),考察了生物接触氧化池的气水比、水力停留时间、悬浮生物填料填充率和气浮池混凝剂投加量、表面负荷对污染物去除效果的影响。
5)  surface load
表面负荷
1.
It is believed that in designing the secondary sedimentation tanks for extended aeration systems, in addition to the calculation on the basis of surface load, the factor of solid load also should be taken into consideration.
就活性污泥法在不同系统中二沉池的设计参数如何取值进行了探讨 ,认为在延时曝气系统的二沉池设计中除了根据表面负荷计算之外 ,还应考虑固体负荷这一因
2.
In sorting out the experimental data of coagulating sedimentation,manual calculation and curving are usually used to find out the relationship among the removal rate C,the surface load u0 and the residence time t.
在凝聚性沉淀试验的数据整理中,要找出去除率C、表面负荷u0和停留时间t之间的关系,通常用人工计算和手工画曲线的方法。
6)  surface charge transistor
表面电荷晶体管
补充资料:负电荷调节剂用染料
分子式:
CAS号:

性质:用于硒鼓等表面带正电荷的静电照相显色粉中,起调节电荷作用的染料。以带负电荷的1:2型金属络合物为主。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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