1) random well widths
阱宽无序
2) quantum well disordering
量子阱无序
3) well width
阱宽
1.
The relations between the ground state energies of electronic and Al concentration,well width and hydrostatic pressure are given.
对GaAs/ALxGa1-xAs量子阱系统中电子的基态能进行了数值计算,给出基态能随铝组份,阱宽和压力的变化关系。
2.
The Kronig-Peney model is applied to calculate the relationship between the vitiation of the composition and well width in InGaAsP multiple quantum wells.
采用有效质量框架下一维有限深势阱模型对InGaAsP多量子阱的组分和阱宽之间的关系进行了计算,利用更符合实验结果的Harrison模型来计算带阶,分别就晶格匹配和应变补偿两种情况进行了比较计算,最后根据要制作的全光功能开关的性能指标对计算结果进行了选择,得到最适合于制作光开关的材料。
4) channel thickness
量子阱宽
1.
52AlAs high electron mobility transistor(HEMT)structures with different channel thickness of 10—35 nm have been investigated in magnetic fields up to 13 T at 1.
4K下不同量子阱宽度(10-35nm)的InP基高电子迁移率晶体管材料的二维电子气特性。
5) the width of potential well
势阱宽度
6) non-uniform well-thickness
非均匀阱宽
1.
InGaAs/AlGaAs non-uniform well-thickness multi-quantum well superluminescent diodes were designed and successfully fabricated,the output properties of light power and spectrum were measured and analyzed.
采用阳极氧化方法和MBE生长技术进行了非均匀阱宽InGaAs/AlGaAs多量子阱超辐射发光管器件的设计和工艺制作,研究了三种条形结构器件的功率输出和光谱输出特性。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条