1) defect reaction
缺陷反应
1.
The stability and defect reactions of neutral and charged H interstitial (H i) and H vacancy (H v) in KH 2PO 4(KDP) have been studied by an ab initio method.
这些结果在原子层次上清楚地解释了实验所建议的缺陷反应机
2.
The analysis of surface effect is based on defect reaction and diffusion theory, the study for surface effect will have good guidance to the improv.
利用缺陷反应和扩散原理对表面层效应进行了初步分析,指出表面层效应的研究对改善和调节材料的电学性能具有重要的指导意义。
2) nonradiative carrier recombination
点缺陷反应
3) Defect of reaction mechanism
反应机理缺陷
4) Defect reaction equation
缺陷反应方程
5) response inhibition deficit
反应抑制缺陷
1.
Using the flanker task of different conflict levels combined with endogenous and exogenous cues,this research examined whether there were response inhibition deficits and modulatory effects of spatial attention on the flanker task of different conflict levels in ODC patients.
结果表明:强迫症患者不同冲突水平的侧抑制任务均无明显反应抑制缺陷,可能与其注意威胁性信息等有关;集中注意在知觉冲突水平上对强迫症患者和正常人的反应冲突进行调节且无显著性差异,可能与强迫症患者关注内容非空间定向有关。
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条