1) dislocation configuration
位错形态
1.
A study on dislocation densities and dislocation configuration in 20CrMnTi steel;
20CrMnTi钢位错密度的测定及其位错形态研究
2) dislocation pit
位错坑形态
1.
The dislocation density and the morphology of dislocation pit of GaP:N LPE semiconductor is studied by SEM.
利用扫描电子显微镜研究GaP：NLPE材料中位错密度和发光的关系及位错坑形态，结果发现：样品经外延后，外延层的位错密度比衬底的位错密度有不同程度的下降，因样品各异，下降幅度为37％～83％；外延层的位错密度越低，样品的发光越好。
3) three-dimensional morphology of dislocations
位错三维形态
4) dislocation configuration
位错组态
1.
The dislocation configuration of FeCrNi alloy at different temperature and different strain rate was observed using HITACHI H-700H TEM,and the relationship between dislocation behavior,temperature and strain rate was discussed.
利用透射电镜观察了不同温度及不同应变速率下FeCrNi合金的位错组态,分析了位错组态与温度及应变速率的关系。
2.
Different dislocation configurations were formed in twins with different widths.
对孪晶铜进行塑性应变幅控制下的疲劳实验,研究了不同宽度的孪晶内疲劳位错组态及演化过程。
3.
The result shows that, the circular deformation behavior of two-phase steel not only relates to the evolutional process of the dislocation configuration of the microstructure, but also is affected by the intensity, type and loading modes of the circular load.
结果表明 ,双相钢的循环变形行为 ,不仅与组织中位错组态的演变过程有关 ,同时也受循环载荷大小、类型以及加载方式所影响。
5) dislocation pattern
位错组态
1.
The dislocation pattern evolution and crack nucleation in a fatigued copper bicrystal with perpendicular grain boundary (GB) have been investigated by electron channelling contrast (ECC) technique in SEM.
采用电子通道衬度技术对垂直晶界Cu双晶在疲劳过程中位错组态的演化与裂纹的形核进行了研究,结果表明,形变带中墙结构的间距从形成之初到疲劳裂纹出现始终保持恒定;穿晶裂纹与沿晶裂纹尖端的位错组态均为胞结构;裂纹优先从形变带产生。
2.
Combing with the surface slip morphology and dislocation patterns, effects of the embedded grain and the surrounding grain boundary on cyclic deformation of bicrystal were discussed.
比较了含镶嵌晶粒铜双晶体及其基体单晶体的循环变形行为，结果表明，双晶体的循环应力总是高于基体单晶体，结合表面滑移形貌和饱和位错组态，分别讨论了镶嵌晶粒和环绕晶界对双晶体循环变形行为的影响。
6) dislocation microstructure
位错组态
1.
The dislocation microstructures in the tensile specimen of aluminium lithium alloys 2090 with addition of minor rare earth element cerium (2090+Ce) were investigated by means of TEM (electron transmission microscopy).
本工作利用TEM技术对添加微量稀土铈的 2 0 90铝锂合金 (2 0 90 +Ce)拉伸试样中位错组态进行了观察 。
2.
Based on the tensile performance of aluminium lithium alloys 2090 and rare earth high strength aluminium lithium alloy (2090+Ce, add trace addition of cerium to the alloy 2090), the dislocation microstructures in the tensile samples of two alloys were investigated by means of TEM technique in order to understand the relationship between macro properties and micro deformation.
在 2 0 90铝锂合金和添加微量稀土铈的 2 0 90铝锂合金 (2 0 90 +Ce)的拉伸性能测试的基础上 ,利用TEM技术对拉伸试样中位错组态进行了观察 ,探讨宏观力学性能与微观变形行为间的联系。
补充资料：不全位错
不全位错
partial dislocation
不全位错partial disloeation伯格斯矢量不是晶格恒同平移矢量的位错。它是堆垛层错的边界，也即是层错与完整晶体部分的分界线。以fcc晶格为例，最常。二‘。一‘，，，、~，，一一，、，、二加，‘爪1，，，八、~，.I见的是在{111}类型的面上通过操作:①告<112>类型2.“J~阵、“‘，~~曰刁~一~一一’「‘~6、““’~~滑移;②抽去一个{111}层，并使上下两岸复合;③插入一个{111}层。这3种操作均造成层错，此层错的边界即是不全位错。分别称为肖克利不全位错， 1‘，，。、0=~不Lll乙J O负弗兰克不全位错，正弗兰克不全位错，。一告〔“‘〕。一奇〔“‘〕。 不全位错复杂之处在于它必然与层错相联系而存在，所以它的形式和运动均受层错之制约。例如上述肖克利不全位错只能在{111}面上作滑移，而弗兰克不全位错根本不能滑动。除fcc晶体外，在hcp、bcc、金刚石结构及其他许多实际晶体中，不全位错是很常见的。一个全位错可以分解为两个或多个不全位错，其间以层错带相联，通常称为扩展位错。 (杨顺华)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条