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1)  anodization conditions
阳极腐蚀条件
1.
The dependence of room temperature visible photoluminescence (PL) of porous silicon (PS) and its microstructure on the anodization conditions and conductivity types and the doping level of the substrate was studied systematically.
研究了阳极腐蚀条件及单晶硅的导电类型和掺杂原子浓度等对多孔硅微结构与室温可见区光致发光性能的影响 。
2)  anodic etching
阳极腐蚀
1.
01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.
用小电流、特殊配比溶液的电化学阳极腐蚀法在p型、〈10 0〉晶向、0 0 1Ω·cm电阻率的硅片制备了大面积纳米硅薄膜 。
3)  corrosion anode
腐蚀阳极
4)  etching conditions
腐蚀条件
1.
The effects of the etching conditions and doping concentration of silicon wafer on the porosity of PS film were investigated.
采用双槽电化学腐蚀法制备多孔硅,主要研究了腐蚀条件及硅基体掺杂浓度对多孔硅孔隙率的影响,并且结合原子力显微镜(AFM)、扫描电子显微镜(SEM)技术对所制备的多孔硅的表面形貌和断面形貌进行了分析表征。
2.
The optimal process of Pt electrode and the effects of etching conditions on the thickness of porous silicon were studied.
用电偶腐蚀法制备多孔硅,主要研究了铂电极的优化制备工艺以及腐蚀条件对多孔硅厚度的影响,并且结合SEM,AFM等测试手段对所制备的多孔硅的表面形貌进行了分析。
5)  anode corrosion
[金属]阳极腐蚀;阳极腐蚀
6)  anodic corrosion film
阳极腐蚀膜
1.
The influence of temperature on the electron property of anodic corrosion film formed on lead in a 4.
5mol/LH2SO4溶液中形成的阳极腐蚀膜电性能的影响。
补充资料:腐蚀阳极
分子式:
CAS号:

性质:腐蚀电池中进行氧化反应的电极。在阳极上,金属溶解以离子的形式进入溶液,并把当量的电子留在金属上。按照这种电化学历程,金属的腐蚀破坏将集中地出现在阳极处(即阳极区)。

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