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1)  Electron injection
电子注入
1.
Study of electroluminescence and electron injection on novel red polyelectrolytes copolymer;
高效饱和红光聚电解质的发光及电子注入特性研究
2.
The key factors of the ineffciency of this solar cell were discussed,such as electron injection and dye/Zn~(2+) aggregate formation,and some methods were proposed to improve the solar cell efficiency.
主要讨论了电子注入、dye/Zn2+的团聚等影响染料敏化纳米ZnO薄膜太阳电池效率的关键问题。
3.
By researching the electron injection of the CdSe detector with MIS contacts, it was found that the electron injection is the important reason which affects the properties of CdSe detectors.
研究了一种制作CdSe室温核辐射探测器的新工艺 ,并通过对CdSe室温核辐射探测器MIS接触电极电子注入机理的研究发现 ,CdSe探测器形成MIS接触电极可以降低表面漏电流 ,减小探测器噪声 ,提高探测器能量分辨率 。
2)  injecting electron
注入电子
3)  hot-electron injection
热电子注入
1.
Study on avalanche hot-electron injection of interface trap characteristic for thin film in nanometre range formed by PECVD;
PECVD形成纳米级薄膜界面陷阱特性的雪崩热电子注入研究
2.
This paper studies the interface trap features of novel thin rapid thermal nitrided SiOxNy film by the technique of avalanche hot-electron injection and the measurements of high frequency C-V and (luasi-static C-V characteristics.
采用雪崩热电子注入技术和高频C-V及准静态C-V特性测试,研究了新型快速热氨化的SiOxNy介质膜界面陷阱的特征,侧重于研究界面陷阱的特性与分布。
4)  Electron beam implantation
电子流注入
5)  electron injecting layer
电子注入层
1.
The typical multi-layer diodes ( ITO/CuPc/TPD/Alq/LiF/Al) were prepared, on the basis of double layers organic light emitting diodes, which was using CuPc and LiF as the hole and electron injecting layer separately.
本文在典型双层有机发光二极管的基础上,分别使用CuPc和LiF作为空穴注入层和电子注入层,制作了典型结构的多层器件ITO/CuPc/TPD/Alq/LiF/ Al。
6)  hot electron injection
热电子注入
1.
Physical model of interface trap for SiO x N y thin film in nanometre range has been studied by means of avalanche hot electron injection.
采用雪崩热电子注入技术研究了纳米级富氮 Si Ox Ny 薄膜界面陷阱的物理模型。
补充资料:电子-电子双共振
      在垂直静磁场H的方向,施加两个微波电磁场:①较弱的微波电磁场,激发电子从能级2向能级3跃迁,不致于饱和;②强的微波电磁场,激发电子从能级1向能级4跃迁,使达到饱和,从而导致能级4的电子转移至能级3,以观察反映2→3跃迁的电子自旋共振信号强度的变化,故称为电子-电子双共振。它与电子-核双共振不同之处是不涉及核的跃迁,并且观察的与电子自旋共振有关的能级和未观察的跃迁能级之间无共享的公共能级。
  

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