1) homogeneous line width
均匀线宽
1.
n this paper,the authors report the temperature dependence of homogeneous line width in photon-gated spectral hole burning materials:metal-tetrabenzoporphyrin derivatives/p-hyfroxybenzaldhyde/PMMA or CA,at a temperature range,from 30K to 70K.
本文通过在不同温度下对金属卟琳系列光子选通光谱烧孔材料的测试，研究了部分有机电子转移型烧孔材料的均匀线宽随温度变化的关系，在３０Ｋ到７０Ｋ温度范围内得到了Γｈｏｍ∝Ｔ１。
2) homogeneous broadening
均匀加宽
1.
The present paper report the research results on inhomogeneous broadening, fluorescence line narrowing, high temperature persistent spectral hole burning, mechanism of hole burning, hole burning dynamics and thermal stability of spectral holes.
基于光谱烧孔在高密度光存储中的可能应用,研究了谱线非均匀加宽、荧光谱线窄化、高温永久性光谱烧孔、烧孔机理、烧孔动力学过程和光谱孔的热稳定性。
4) Homogeneously broadening
均匀加宽
1.
The amplification of highly chirped pulse with broadband in inhomogeneously broadening amplifier is investigated.
研究了非均匀加宽放大介质中宽带啁啾激光脉冲的放大情况。
6) non-uniform well-thickness
非均匀阱宽
1.
InGaAs/AlGaAs non-uniform well-thickness multi-quantum well superluminescent diodes were designed and successfully fabricated,the output properties of light power and spectrum were measured and analyzed.
采用阳极氧化方法和MBE生长技术进行了非均匀阱宽InGaAs/AlGaAs多量子阱超辐射发光管器件的设计和工艺制作,研究了三种条形结构器件的功率输出和光谱输出特性。
补充资料：IC工艺线宽
线宽:4微米/1微米/0.6微未/0.35微米/035微米等,是指IC生产工艺可达到的最小导线宽度,是IC工艺先进水平的主要指标.线宽越小,集成度就高,在同一面积上就集成更多电路单元.
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条