1) Rutherford backscattering/channelling spectrum
背散射/沟道谱
2) backscattering and channeling
背散射和沟道
3) backscattering/channeling technique
背散射/沟道技术
1.
The lattice damage in GsAs irradiated by 1MeV Si￣(+) at room temperature and elevated substrate temperature has been investigated using Rutherford backscattering/channeling technique.
用卢瑟福背散射／沟道技术研究了１ＭｅＶＳｉ￣＋在３５０℃高温和室温下以不同剂量注入ＧａＡｓ后的晶格损伤。
4) Rutherford backscattering/channeling
卢瑟福背散射/沟道
1.
Strain in Al I[WTFZ]nGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution x-ray diffraction;
用卢瑟福背散射/沟道技术及高分辨X射线衍射技术分析不同Al和In含量的AlInGaN薄膜的应变
2.
Depth-dependent elastic strain in ZnO/Zn_(0.9)Mg_(0.1)O/ZnO heterostructure studied by Rutherford backscattering/channeling;
用卢瑟福背散射/沟道技术研究ZnO/Zn_(0.9)Mg_(0.1)O/ZnO异质结的弹性应变
5) RBS/Channeling
卢瑟福背散射/沟道
1.
RBS/Channeling study on elastic strain in ZnO film grown by MOVCD;
用卢瑟福背散射/沟道技术研究MOVCD方法生长的ZnO薄膜的弹性应变
6) RBS/C
卢瑟福背散射/沟道效应
1.
In this article, the principles of characterizing strain by RBS/C, HRXRD and Raman spectra were thoroughly described.
本文详细介绍了卢瑟福背散射/沟道效应(RBS/C)、高分辨率X射线衍射(HRXRD)和拉曼(Raman)谱等技术表征SiGe薄膜中应变的原理。
补充资料：背道
1.背弃道义。 2.偏僻的街道。 3.朝着相反的方向。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条