1) Za Qi
杂气
1.
Simple Discussion of the Cause of Theory Disease of WuYouke s Za Qi Theory of Infectious Epidemic Disease;
浅谈吴又可《温疫论》的“杂气”病因说
2) Gas-inclusive relation
杂气关系
3) gasliquid impurities
气液杂质
6) gas-doping
气相掺杂
1.
With the help of IR and X-ray,the influence of gas-doping on PPP structure was discussed.
采用AlCl_3作为掺杂剂对聚对苯撑进行气相掺杂,考查了掺杂时间、温度、暴空时间对其电导率的影响。
2.
1Te wafers by In as gas-doping source under Cd/Zn equilibrium partial pressures is explored,and annealing on In-doped as-grown Cd 0.
1 Te晶片 ,采用在 Cd/ Zn气氛下 ,以 In作为气相掺杂源进行热处理 ;而对于低阻In- Cd0 。
补充资料：采气工艺(见天然气开采工艺)
采气工艺(见天然气开采工艺)
gas production technology
，一‘J\匕乙吕天然气开采工艺pro以uetionteehnology)见
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条