1) interconnect
[英][,ɪntəkə'nekt] [美]['ɪntɚkə'nɛkt]
互连线
1.
Improved delay estimation method for RLC interconnects;
改进的RLC互连线延时估算方法
2.
Modeling of RF Coupled Interconnects on Lossy Silicon Substrates;
射频高损耗硅基双互连线建模
3.
Exploiting clock circuit dynamical optimization using RLC interconnect model;
用RLC互连线模型实现时钟电路的动态优化
2) interconnects
互连线
1.
On-chip Inductance Modeling of VLSI Interconnects Based on Neural Networks;
基于神经网络的片上互连线电感提取法
2.
Modeling of interconnects and delay analysis in the presence of Random VLSI process variations
VLSI随机工艺变化下互连线建模与延迟分析
3.
To extract the 2-D capacitance distributed parameters of interconnects accurately and fast,a measured equation of invariance method is used to calculate the electric field of interconnects,and the effect of the aberration of conductor sizes on the parasitic extraction is discussed.
为精确快速提取二维互连线电容分布参数,该文采用测度不变方程法计算互连线电势分布,探讨了导体尺寸微小扰动对电容分布参数的影响。
3) interconnection
[英][,intəkə'nekʃən] [美][,ɪntɚkə'nɛkʃən]
互连线
1.
Design and Implementation of 3D Interconnections Capacitance Extraction;
三维互连线寄生电容提取算法的设计和实现
2.
This paper introduced copper as substitute for aluminum as the metal interconnection with its low resistance rate and high resist-electron migration ability, briefed on the preparation techniques of Cu, and then discussed the new disfigurement and its solution such as groove disfigurement, bubble disfigurement and metal loosing disfigurement.
在集成电路中采用双镶嵌工艺制备互连线,铜作为互连线的材料具有低电阻率和较好的抗电迁移能力等优点,同时存在新的缺陷模式如沟槽缺陷、气泡缺陷、金属缺失等,目前的工作主要是该工艺的完善。
3.
Considering the serious RC network effects of interconnections in very high speed digital ICs, the parasitic parameters of the interconnections with TSMC 0.
分析了RC网络效应对超高速集成电路中互连线的影响 ,基于TSMC 0 。
4) interconnection line
互连线
1.
Finally,a method of building the Spice model with high-frequency interconnection line in the substrate is proposed,thus providing a foundation for coordination design of chip package.
根据二端口等效电路理论,提出了建立基板高频互连线Spice模型的方法,为芯片-封装协同设计提供了依据。
2.
In this case, interconnection lines between the chips in the Multi-Chip Module (MCM) or Printed Circuit Board (PCB) have become the important factors of the signal integrity and entire system performance.
在现代高性能集成电路中,由于亚微米和深亚微米技术的发展,器件和单元电路的尺寸越来越小,由寄生参数引起的影响不大,而此时芯片中的单元电路间、印刷电路板(PCB)及多芯片组件(MCM)的各块芯片间的互连线的电长度较大,将会引起相当严重的寄生效应。
5) Al interconnect
Al互连线
1.
In order to study the failure of IC devices induced by the stress in VLSI metal interconnect, In-situ observation of the stress changes of VLSI Al interconnect was studied under the electromigration and thermal conditions by using a synchrotron radiation x-ray diffraction technique.
为研究VLSI金属互连线的应力导致IC器件失效的问题,采用同步辐射源X射线衍射技术,原位测试了VLSI中Al互连线在电迁徙及加热条件下的应力变化。
6) VLSI interconnect
VLSI互连线
1.
It is proved that these models can be used to extract the capacitances from almost all of the VLSI interconnect structures.
提出了八种节点电容典型结构用以建立电容模型库,并阐明了这八种结构可以提取大多数VLSI互连线的电容参数,给出了这些结构的拟合公式。
补充资料：常州冶炼厂铝线坯连铸连轧生产线
常州冶炼厂铝线坯连铸连轧生产线
常州冶炼厂铝线坯连铸连轧生产线粉
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条