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1)  p-type ZnO
p型ZnO
1.
Preparation and characteristics of p-type ZnO by treated gaseous ammonia annealing;
NH_3气氛处理制备p型ZnO薄膜及性能表征
2.
Preparation of ZnMgO Alloy Films, Li-N Co-doped p-type ZnO Thin Flims by Pulsed Laser Deposition and Fabrication of ZnO UV Detector;
脉冲激光沉积法生长ZnMgO合金薄膜和Li-N共掺p型ZnO薄膜及紫外探测器的研制
3.
Preparation and Properties of p-type ZnO:Li by PLD;
PLD法生长锂掺杂p型ZnO薄膜及其性质研究
2)  p type ZnO
p型ZnO
1.
But the fabrication of the pn junction based on ZnO is very hard, due to that the undoped ZnO is n type and the fabrication of the p type ZnO is very hard.
但是,p型ZnO薄膜或者不能获得pn结、或者形成的pn结不能实现电发光、或者电致发光非常微弱,这主要是由于p型ZnO薄膜的材料特性太差。
3)  p-type ZnO films
p型ZnO
1.
The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates by using radio frequency magnetron sputtering technique of ZnO∶In2O3 powder target and then by combining with N-implantation.
在石英玻璃衬底上以ZnO∶In2O3粉末为靶材,采用射频磁控溅射法制备出具有良好c轴择优取向的ZnO∶In薄膜,继而对样品进行二次N离子注入掺杂,成功实现N-In共掺p型ZnO薄膜。
4)  p-type ZnO films
p型ZnO薄膜
1.
Preparation and characteristics research of p-type ZnO films;
p型ZnO薄膜的制备及特性
5)  p-type ZnO film
p型ZnO薄膜
1.
However,the bottleneck for ZnO applications is the fabrication of the producible,low resistivity,p-type ZnO films with high quality.
然而ZnO基半导体器件实用化的主要障碍是低阻p型ZnO的可重复性制备,因此对p型ZnO薄膜制备方法及机理的研究具有重要意义。
2.
There is the most N content in the film when the ration of Ar∶O2∶N2 is 15∶7∶8,at the same time,the peaks located in 374 nm and 391 nm are the highest intensity,the characteristic of p-type ZnO films has already appeared.
当Ar∶O2∶N2为15∶7∶8时,薄膜中N含量最多,分别在374nm、391nm处出现了发光峰且发光强度最佳,此时薄膜已明显表现出p型ZnO薄膜的特征。
6)  photoluminescence properties of p-type ZnO
p型ZnO发光特征
补充资料:iron zinc oxide (fe2zno4)
CAS:12063-19-3
分子式:Fe2ZnO4
中文名称:氧化铁锌
英文名称:Iron zinc oxide;iron zinc oxide (fe2zno4);diiron zinc tetraoxide
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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