1) specific contact resistance
接触电阻率
1.
Calculation of specific contact resistance in ohmic contacts;
欧姆接触中接触电阻率的计算
2.
But Ohmic contacts on p-type GaN with low specific contact resistance are more difficult to realize than those on n-type GaN.
本文介绍了利用金属Au、Cr/Au在p型GaN材料上做了接触性能研究,通过退火等实验获得了较理想的欧姆接触,测试后计算出Au、Cr/Au与p型GaN材料间的接触电阻率分别为7。
3.
The measurements of the specific contact resistance ( ρ c) were carried out for Ti/Au ohmic contact to heavily boron\|doped p\|diamond (～10 20 cm -3 ) by the transmission line model (TLM).
采用传输线模型测量了重B掺杂 p型金刚石薄膜 (约 10 2 0 cm-3 )上Ti/Au欧姆接触电阻率 ρc,测试了 5 0 0℃退火前后及大电流情况下的I V特性 ,研究了退火对 ρc 的影响 。
2) contact resistivity
接触电阻率
1.
0×10~(18)cm~(-3)),the experi- ment shows that the contact resistivity keeps unchanged and shows good temperature reliability when the stor- age temperature under 300℃during the storage time of 0～24 hours;but the ohmic contact has shown evi- dent degeneration after the storage at 300℃for 24 hours and at 500℃for 24 hours respectively.
0×10~(18)cm~(-3))的欧姆接触特性,试验结果标明,当测量温度低于300℃时,存储时间为0～24h,其接触电阻率基本不变,表现出良好的温度可靠性;分别经过300、500℃各24h高温存储后,其欧姆接触发生了较为明显的退化,且不可恢复。
2.
To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/Au/Ni/Au metallic system that was fabricated in n-GaN materials has been developed.
为了获得n-GaN的低接触电阻的欧姆接触,采用Cr/Au/Ni/Au金属化系统与n—GaN形成欧姆接触,并对其不同温度下的接触电阻率进行了测试分析。
3.
The best alloying temperature is 220℃ and contact resistivity exhibited about 6.
研究了Ａｇ／ＡｕＧｅＮｉ／ｎ－ＧａＳｂ在１５０℃一４５０℃下合金处理对欧姆接触的影响，最佳合金温度为２２０℃，此时接触电阻率为６。
3) specific contact resistance
比接触电阻率
1.
The specific contact resistance ( ρ _c) of annealed Ti films on n-type 3C-SiC was measured using two kinds of.
用两种不同的传输线模型对Ti/3C-SiC欧姆接触的ρc(比接触电阻率)进行测量,在750°C退火后Ti/3C-SiC的ρc达到了最低值为3。
4) measurement of ohmic contact resistivity
接触电阻率测量
5) contact resistance
接触电阻
1.
Stable distribution analysis to statistical evaluation of contact resistance in aluminum alloy spot welding;
基于稳定分布的铝合金点焊接触电阻
2.
On the contact resistance between graphite/polypropylene composite plate and carbon paper;
石墨／聚丙烯复合板与碳纸间的接触电阻
3.
Study of prediction method for contact resistance based on experiment constitutive relation;
基于实验本构关系的接触电阻预测方法研究
6) interfacial contact resistance
接触电阻
1.
The electrochemical methods were investigated in a simulated PEMFC environment and the volt-ampere technique was applied to measure interfacial contact resistance between the sample and carbon paper.
以304不锈钢为研究对象,采用电化学方法测定其在模拟PEMFC环境下的极化曲线和对应于PEMFC工作电位下的恒电流极化曲线,用伏安法测量304不锈钢表面氧化膜/钝化膜与碳纸之间的接触电阻。
2.
The 304 stainless steel treated by electroplating Cr and plasma-assisted nitriding processes was investigated by electrochemical methods in the simulated PEMFC environments, and interfacial contact resistance between the samp.
测定了经过镀铬后再离子氮化的304不锈钢在模拟PEMFC环境下的电化学性能,测量了氮化层与碳纸之间的接触电阻。
3.
The interfacial contact resistance between the sample and carbon paper are measured with volt-ampere technique.
以304不锈钢做为研究对象,测定了其在模拟PEMFC环境下的极化曲线,极化时间分别为4 h和10 h的交流阻抗谱,用伏安法测量了304不锈钢表面氧化膜/钝化膜与碳纸之间的接触电阻。
补充资料：电导率(见电阻率)
电导率(见电阻率)
conductivity
d!日nd日O}已电导率(eonduetivity)见电阻率。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条