1) square pulse
方脉冲
1.
By comparing the photoconductive decay curves induced by ideal Gaussian pulse and the square pulse,with that induced by an δ-function illumination,it is found that the Gaussian pulse light source with less than 2ns pulse width or the square pulse light source with less than 10ns pulse width can be equivalent to an δ illumination.
通过研究两种理想的脉冲光源——高斯脉冲、方脉冲与理想δ函数光源产生的光电导衰减曲线的对比,发现对于高斯脉冲光源,只有在脉宽的条件下才可等效于δ函数光源;而脉宽的方脉冲才能等效为δ函数光源。
2) square-wave pulse
方波脉冲
1.
In this paper,the anti-scaling effect of EWP which used square-wave pulse current have been studied,the data show that the anti-scaling rate is 100% when the voltage is 2V.
文中对采用方波脉冲电流的电子水处理器的阻垢效果进行了研究。
2.
In order to explore the electromagnetic pulse s effect on the electronic device,the experiments on LM324N and CD4069UB with the square-wave pulse of different width are done,in which it is found that the device circuit s damageis related to the magnitude of pulse energy to a great extent,and there is a phase from adiabatic course to therma.
为了探究电磁脉冲对电子器件的损伤机理,用不同脉宽的方波脉冲对LM324N、CD4069UB进行了注入实验,发现器件电路损伤在很大程度上与脉冲能量的大小有关,存在一个由绝热过程向热平衡转化的阶段,验证了电磁脉冲对电子器件的绝热烧毁效应。
3) rectangular pulse
方波脉冲
1.
Some integrated circuits were injected by rectangular pulse and ESD pulse for comparison of the damage effects caused by the two types of pulses.
采用方波脉冲和ESD脉冲对3种集成电路进行了注入损伤效应实验,目的是比较二者对器件损伤的异同之处。
2.
The similarities and differences of damage effects of integrated circuits were studied by the test that two chips were injected by ESD and rectangular pulse respectively.
为了考察不同波形脉冲对集成电路损伤效应的异同性,用ESD和方波脉冲对2种集成电路器件进行注入损伤效应实验,在采用曲线拟合分析法建立起波形参数与器件损伤参数间的数学模型后,讨论了不同脉冲注入时器件的损伤阈值和损伤机理。
补充资料：方方锦
方方锦 蜀锦品种之一。在织物单一的底色上，以彩色经纬线配以等形的方格，格内饰以不同色彩的圆形或椭圆形的图案。这种装饰方法，是对唐代“红子格”的继承和发展。组织结构为缎地上现纬浮花。四川南充曾用上述方法制成方方被面。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条