1) poly-SiGe
多晶锗硅
1.
The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM.
采用金属Ni诱导与超高真空化学气相沉积(UHVCVD)相结合的方法,在热氧化硅衬底上生长了多晶锗硅薄膜。
2) polycrystalline SiGe
多晶硅锗
1.
Effects of hydrogenation for polycrystalline SiGe (poly-Si1-xGex) thin films were estimated by investigating the dark conductivity and activation energy that derive from the conductivity as a function of the temperature.
优化了热丝法氢处理多晶硅锗薄膜工艺条件。
3) SiGe bulk
硅锗单晶
1.
The distribution of impurity Ge in SiGe bulk single crystal which was grown by varying speed CZ was measured by using the SEM-EDS methods, and it was found that the Ge concentration varied from a lower value at head to a highter one at the tail of Si crystal which was doped Ge.
利用扫描电镜能谱分析法,对 CZ 法生长的掺锗浓度不同的硅锗单晶中锗浓度进行了测定,结果发现硅中锗的纵向分布是头部浓度较低,尾部锗浓度较高。
4) SiGe mixed crystal
锗硅混晶
6) SiGe single crystal
锗硅单晶
补充资料：多晶锗
分子式：
CAS号：
性质：由不同晶向、不同尺寸的锗单晶粒组成的固体锗，包括还原锗、高纯锗，铸造多晶锗和直接多晶锗。主要做光学镀膜、含锗超导材料、非半导体用合金原料等。
CAS号：
性质：由不同晶向、不同尺寸的锗单晶粒组成的固体锗，包括还原锗、高纯锗，铸造多晶锗和直接多晶锗。主要做光学镀膜、含锗超导材料、非半导体用合金原料等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条