1) pit information
凹坑信息
1.
The characteristics of photoelectric signal are made by establishing mathematic model of pit information detection.
为提取凹坑信息,提出采用基于光反射的非接触式检测方法。
2) message pit
信息坑
3) dimple
[英]['dɪmpəl] [美]['dɪmpəl]
凹坑
1.
Review of heat transfer enhancement for dimpled surface;
凹坑强化传热的研究进展回顾
2.
Influence of dimple space on heat transfer enhancement and pressure loss in a dimpled rectangular channel
间距对凹坑强化传热和流动阻力的影响
3.
The application shows that the optimization can greatly reduce the dimple magnitude and improve the punching quality.
实践证明:优化后的凸模在很大程度上减小了凹坑的塌陷量,提高了产品质量。
4) pit
[英][pɪt] [美][pɪt]
凹坑
1.
Limit load analysis on spherical head with pit located in the structural discontinuity area;
球形封头上结构不连续处凹坑极限载荷分析
2.
Cause Analysis and Prevention of Pit Defect on Drum after Plate Winding;
钢板卷筒后筒体表面凹坑缺陷的成因分析与预防
3.
Safety Assessment for Featheredged Sleeve Press-Ure Vessel Containing Pit Defects and Research for Fatigue Life of Numerical Simulation;
含凹坑缺陷薄壁圆筒形压力容器的安全评定以及疲劳寿命的数值模拟研究
5) part-through slot
凹坑
1.
40 of "pressure vessels periodical inspection regulation",the stress distribution of local thinned area in the boundary stress region of nozzle-cylinder is calculated and the trends of stresses influenced by the dimension and location of part-through slot are obtained.
参考《压力容器定期检验规则》第40条,采用有限元方法计算了筒体接管边缘应力区局部减薄处的应力分布,得到了局部减薄处凹坑的尺寸与位置对应力的影响趋势,讨论了应力集中系数随尺寸变化的规律,为筒体接管边缘应力区局部减薄处的强度评定提供了一定的计算依据。
6) pits
凹坑
1.
Wet etching pits of Pyrex glass for metallization;
Pyrex玻璃金属化凹坑的湿法腐蚀
2.
The characteristics and phenomenon of pits and cracks on cast iron caused by little fusion laser quenching with SiO 2 coating are discussed in this paper The influence of physical and chemical properties of coatings such as acidity,basicity,oxidation,melting point and viscosity etc.
讨论了二氧化硅涂料铸铁微熔激光淬火的特点及硬化层表面出现凹坑和裂纹的现象。
3.
The ion bombardment results in a production of micro-defects(pits)on Si substrate surface and therefore the contact area of diamond film with Si surface is.
本文分析衬底负偏压引起的离子轰击对Si表面产生的影响之后 ,基于离子轰击使得Si衬底表面产生了微缺陷 (凹坑 )增大了金刚石膜与Si衬底结合的面积 ,理论研究了离子轰击对金刚石膜与Si衬底结合力的影响。
补充资料：凹坑
分子式：
CAS号：
性质：半导体在像工艺中的一种局部区域缺陷，其特征是图像从边界向内部延伸的缺损。
CAS号：
性质：半导体在像工艺中的一种局部区域缺陷，其特征是图像从边界向内部延伸的缺损。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条