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1)  X-ray double crystal rocking diffraction
X射线双晶回摆衍射法
2)  X-ray double crystal diffraction
X射线双晶衍射
1.
Analysis of RTD structure is made with X-ray double crystal diffraction.
用分子束外延技术(MBE)生长了GaAs基共振隧穿二极管(RTD)的材料结构,利用X射线双晶衍射(XRD)方法对材料进行了测试分析。
2.
High quality InGaAs/GaAs quantum well (QW ) structure grown by molecular beam epitaxy (MBE) is characterized by X-ray double crystal diffraction.
用X射线双晶衍射方法对MBE方法生长的InGaAs/GaAs量子阱结构卡才料进行了测试分析。
3.
Analysis of DBR structure is made with X-ray double crystal diffraction.
 利用X射线双晶衍射方法,测定了分布布拉格反射镜(DBR)的衍射回摆曲线,除了DBR主衍射峰("0"级衍射峰)外,还观察到"1"级和"2"级卫星峰。
3)  DCXRD
X射线双晶衍射
1.
Elaborate Control of RTD s Nanometer Thin Layers & DCXRD Analysis;
RTD纳米薄层的精细控制及X射线双晶衍射测量
4)  Double crystal X-ray diffraction
双晶X射线衍射
1.
(2) Investigation on microstructures of Mn doped Si thin films and Fe doped Si thin films by double crystal X-ray diffraction(DCXRD)DCXRD is used to study the microstructures of Mn doped Si thin films and Fe doped Si thin films annealed at different temperatures.
(2)用双晶X射线衍射(DCXRD)研究Mn掺杂和Fe掺杂硅薄膜微结构双晶XRD被用来研究Mn掺杂和Fe掺杂Si薄膜微结构。
5)  double crystal X-ray diffraction
X射线双晶衍射
1.
Properties of GaN layers were investigated by double crystal X-ray diffraction,optical microscope and ECV measurements.
用X射线双晶衍射、电化学CV技术对GaN的结晶性能和电学性能进行了表征。
2.
The effect of Si-doping on the characteristics of AlGalnP/GalnP multiple quantum wells was studied by using double crystal X-ray diffraction and photoluminescence.
低压MOCVD方法生长了掺Si与不掺Si的AlGaInP/GaInP多量子阱结构,运用X射线双晶衍射与光荧光技术研究了掺Si对量子阱性能的影响。
3.
Properties of some GaN and GaN:Mg films with different blue luminescence relative intensity were investigated by Rutherford backscattermg/channeling measurement, double crystal X-ray diffraction measurement, photoluminescence technique, respectively.
采用卢瑟福背散射/沟道技术, X射线双晶衍射技术和光致发光技术对几个以MOCVD技术生长的蓝带发光差异明显的未掺杂GaN外延膜和GaN:Mg外延膜进行了测试。
6)  XRD
X射线双晶衍射
1.
Thermal annealing of ZnO thin films is carried out in air from 710 to 860℃,and the effect of annealing on the structural and optical properties of ZnO films is characterized by DCXRD and PL spectra.
用X射线双晶衍射、光致发光法研究了退火温度对 ZnO薄膜的结构、发光性能的影响。
2.
The properties of the samples(unannealed) are examined by double crystal X-ray diffraction(DCXRD),atomic force microscopy(AFM),and room temperature PL spectra.
用 X射线双晶衍射、原子力显微镜和光致发光技术对样品进行了综合表征 ,报道了 Zn O单晶膜的 (10 2 )非对称衍射结果 。
补充资料:回摆图
分子式:
CAS号:

性质:衍射图的一种。实验中,将单晶样沿某一对称(晶)轴或晶棱方向定向安置于回摆相机中处于中轴线的测角头上,感光胶片则以特定半径绕晶体作圆柱状的设置,以波长一定的特征X射线垂直入射于该晶轴而使晶体绕轴作有限角度范围(如20°)正、反旋转交替的往复运动,如此所得的衍射图是为回摆图。回摆图有助于判断劳厄衍射对称性在该轴向的表现,亦可导出与该晶轴对应的基本周期。早期,回摆图亦曾用于收集晶体衍射强度数据。

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