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1)  Schottky barrier diode
肖特基势垒二极管
1.
I-V characteristics of 4H-SiC Schottky barrier diodes under high temperature;
高温Ti/4H-SiC肖特基势垒二极管的特性
2.
The whole circuit uses low power consumption and low voltage parts such as a new high speed digital optical-coupler HCPL-060L and Schottky barrier diode etc.
介绍了RS-232接口与RS-485接口无源光电隔离转换器的设计,采用简单实用的串口窃电技术,整个电路使用了新型高速数字光电耦合器HCPL-060L、肖特基势垒二极管等低功耗、低工作电压的元器件,并详细说明了硬件的设计。
3.
Th e Schottky barrier diodes are fabricated during the 6H-SiC epilayers grow n by using chemical vapor deposition on commercially available single-crystal 6 H-SiC wafers.
在可商业获得的 N型 6 H - Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ,在此结构材料上 ,通过热蒸发 ,制作 Ni/6 H- Si C肖特基势垒二极管
2)  SBD
肖特基势垒二极管
1.
In addition, we fabricated Au and Ni Schottky Barrier Diodes (SBDs) on Silicon surface of n-type 6H-SiC.
本文讨论了n型6H-SiC欧姆接触的制备工艺及其基本电学及热学特性,并在此基础上采用金属Au及Ni在n型6H-SiC硅面(0001晶向)上制备了具有一定特性的肖特基势垒二极管
3)  Schottky diodes
肖特基势垒二极管
1.
The key device of the mixer is a pair of GaAs beam lead antiparallel Schottky diodes.
混频的核心元件是反向并联的GaAs梁式引线肖特基势垒二极管对。
4)  Schottky barrier diodes
肖特基势垒二极管
1.
Analytical model for I-V characteristics of 4H-SiC Schottky barrier diodes;
4H-SiC肖特基势垒二极管伏-安特性的解析模型
5)  schottky diode
肖特基势垒二极管
1.
The manufacturing process of ntype 6Hsilicon carbide Schottky diode with electrode deposited by DCmagnetron sputtering has been studied in the paper The electrical and temperature characteristics of Pt/6HSiC Schottky diode were studied Results show that the device has good rectifying property, lower reverse current and high voltage It can also operate stably at high temperature (600 °C)
 采用直流磁控溅射法、Pt作肖特基接触的工艺,制作了N型6H-SiC肖特基势垒二极管,对肖特基势垒二极管的电学特性及温度特性进行了研究。
6)  SiC-Based Schottky Barrier Diode
SiC肖特基势垒二极管
1.
Application of Power Factor Correction Circuits with SiC-Based Schottky Barrier Diode;
SiC肖特基势垒二极管在PFC电路中的应用
补充资料:肖特基势垒(Schottkybarrier)
肖特基势垒(Schottkybarrier)

金属和半导体接触形成半导体表面势垒,此势垒又称肖特基势垒。

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