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1)  microelectronic materials
微电子材料
1.
The relative motion law of the particles in slurry, with respect to the processed surface of the silicon, during the chemical mechanical planarization (CMP) of microelectronic materials is firstly discussed.
通过研究微电子材料化学机械平坦化(CMP)加工过程中磨料颗粒在晶片加工表面的运动规律,得到磨料颗粒在晶片表面的运动轨迹方程。
2.
The deformation of materials and material removal mechanism during chemical mechanical palnarization (CMP) processing of microelectronic materials are numerically analyzed using finite element method.
采用有限元数值方法分析微电子材料化学机械平坦化(CMP)工艺过程中材料的变形和去除机理,得到作用在磨料颗粒上的力与名义压力、磨粒含量以及垫板几何和力学特性之间的关系,进而建立起一个材料去除率(MRR)模型。
2)  micro-nanoelectronics materials
微纳电子材料
1.
With the scaling down of device feature size in integrated circuits (IC), it becomes apparent that the mechanical properties of micro-nanoelectronics materials exert increasingly important impact on the reliability of devices, even to that of the entire circuit.
随着集成电路器件特征尺寸的不断减小,微纳电子材料的力学性能越来越显著地对器件乃至整个电路的可靠性产生重要影响。
3)  Micro-electronics Function & Material
微电子功能材料
4)  micro-electronic materials
微电子材
5)  electronic material
电子材料
1.
Applications of copper plating technology to electronic materials;
电镀铜技术在电子材料中的应用
6)  electronic materials
电子材料
1.
This paper reviews the development from the electronic materials to the optolectromc and photonic materials with respect to the progress of information technology (IT).
结合信息技术(以计算机和通讯为主)的进步来考察从电子材料到光电子材料和光子材料的发展。
2.
They are modern analysis instrument and technology,electronic materials and devices,and thin film physics and technology.
《现代分析仪器与技术》、《电子材料与电子器件》和《薄膜物理与技术》等三门课是电子科学与技术本科专业的主要专业课程。
3.
Since the current voltage characteristics of the threshold memory switch in chalcogenides have been observed by Ovshinsky at 1968, especially both n type and p type doping for hydrogenated amorphous silicon have been avaliable, as one kind of important electronic materials amorphous semiconductors in both fundamental research and application were remarkably developed over the past 30 years.
1968年Ovshinsky在多元硫系薄膜中观察到电的开关与存贮效应以来 ,特别是 1975年氢化非晶Si的 p型与n型掺杂控制的实现 ,非晶半导体作为一个重要的电子材料 ,在过去的30多年中吸引了大量的基础研究并得到了广泛的应用。
补充资料:用扫描电子显微镜作耐火材料微区域分析


用扫描电子显微镜作耐火材料微区域分析


用扫描电子显微镜做耐火材料微区域分析
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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