48O 3(PZT) ferroelectric thin films were deposited on LaNiO 3 coated p-Si(111) substrates by RF magnetron sputtering at low substrate temperature( T =370℃) with deposition power ranging from 60W to 120W, sequentially followed by a rapid thermal annealing(RTA) process at temperature 650℃ for 5 minutes.

Power deposition of electron cyclotron waves in hot plasmas;

Ray tracing method is used to calculate and superpose the power deposition of any wave packet, and the power deposition result is obtained.

In this paper, the propagation of fast waves in the ion-cyclotron range of frequencies, the current drive and the power deposition in plasmas are investigated, some important results are as follows.

Effects of technological conditions on deposition rate and structure of functional Co-B films prepared by electroless plating;

Effects of deposition rate on surface topography of Ni-Cr thin film deposited by EB-PVD;

Influences of process parameters on deposition rate of CVI-TaC;

Theoretical analysis and experimental study of particle deposition rate;

Experimental study on improving deposition rate using PWM-based intermittent spray from enlarged nozzle

The results indicated that particle distribution was submitted to Gaussian distribution and the deposition rate was the greatest while the peak value was between -61 and +74.