1) defect bodies
缺陷体
1.
The strength analysis theory of defect bodies is discussed by the method ofdamage mechanics in this paper,It gives a basic equation set of the most gen-eral form,which is the strength analysis theory of defect bodies showed byformula (6), and presents a calculation mode used to solve the above ques-tion.
本文用损伤力学方法研究缺陷体的强度分析理论，给出了以（6）式表示的缺陷体强度分析理论最一般形式的基本方程组，并介绍了一种求解上述问题的计算模型。
2) crystal defect
晶体缺陷
1.
Studies of characteristics of crystal defects in diamond synthesized under different conditions;
不同生长条件下合成的金刚石晶体缺陷的特征研究
2.
Researching crystal defects with atomic force microscope;
利用原子力显微镜研究晶体缺陷
3.
The main type of crystal defects in this sample are dislocations, and some of them belong to the Frank type.
利用同步辐射X射线对人造金刚石晶体缺陷进行了形貌学研究,实验采用了透射 (劳埃 )形貌术和反射形貌术两种方法。
3) crystal defects
晶体缺陷
1.
Experimental method for reseaching crystal defects with synchrotron radiation topography;
利用同步辐射形貌术研究晶体缺陷的实验方法探讨
2.
The mechanism of the formation of mullite solid solutions was discussed from the viewpoint of crystal defects, and the detailed defects formula and reaction equations were given.
从晶体缺陷的角度探讨了莫来石Al4+2xSi2-2xO10-x的形成机理,并给出了缺陷表达式及缺陷反应方程式。
3.
Based on the new ternary infrared detection materials, Hg1-xZnxTe and Hg1-xMnxTe, and the substrates for Ⅱ -Ⅵ compound film epitaxy, CdTe and Cd1-xZnxTe, the researches on the appliction, crystal growth techniques and the crystal defects of Ⅱ -Ⅵ compounds are reviewed.
以新型红外探测材料Hg_(1-x)Zn_xTe、Hg_(1-x)Mn_xTe及外延衬底材料CdTe及Cd_(1-x)Zn_xTe为代表分析了Ⅱ-Ⅵ族化合物光电子材料的应用背景与现状、晶体生长方法,晶体生长过程中的主要理论问题及各种晶体缺陷的形成与控制。
5) defect
[英][di'fekt] [美]['di,fɛkt, dɪ'fɛkt]
晶体缺陷
1.
This article reviews in detail new progress of AlN in the fild of defects,thermal conduction mechanism,processing of powder and its hydrolysis and oxidation,and sintering at present.
本文详细地综述了近年来AlN陶瓷在晶体缺陷、导热机理、粉末的制备及其水解和氧化、烧结及其应用等领域的研究进展 ,并展望了AlN未来的发展趋势。
6) lattice defects
晶体缺陷
1.
The lattice defects in the plasma- nitrided layer have been studied by TEM.
用透射电镜研究了稀土催渗离子渗氮层中的晶体缺陷。
2.
An introduction of recent progresses on the studies of lattice defects in lead tungstate crystals is presented.
本文介绍近年来钨酸铅晶体缺陷研究方面的进展，这些结果表明了在钨酸铅晶体闪烁性能研究中考虑晶体缺陷影响的重要性。
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条