1) Ta-C(N) films
Ta-C(N)薄膜
2) Nitrogenated tetrahedral amorphous carbon(ta-C∶N)
ta-C∶N薄膜
1.
Nitrogenated tetrahedral amorphous carbon(ta-C∶N) films were prepared on the polished C—Si substrates by introducing highly pure nitrogen gas into the cathode region and the depositing chamber synchronously using filtered cathodic vacuum arc(FCVA) technology.
用过滤阴极真空电弧沉积系统制备掺N非晶金刚石(ta-C∶N)薄膜,通过在阴极电弧区和沉积室同时通入N2气实现非晶金刚石薄膜的N原子掺杂,并通过控制N2气流速制备不同N原子含量的ta-C∶N薄膜。
3) Ta-C films
Ta-C薄膜
4) Fe Ta N films
Fe-Ta-N薄膜
5) Ta-N/Zr film
Ta-N/Zr薄膜
6) Ta-N thin film resistor
Ta-N薄膜电阻
1.
A Ta-N thin film resistor was integrated in anodic alumina MCM-D substrate using RF reactive sputtering.
在铝阳极氧化多层基板内用RF反应溅射制备了埋置型Ta-N薄膜电阻,研究了铝阳极氧化过程对Ta-N薄膜电阻和显微结构的影响。
补充资料：arosurf ta 100
CAS: 107-64-2
分子式: C38H80N·Cl
分子量: 551.05
中文名称: N,N-二甲基二-N-1-十八碳氯化胺
英文名称: 1-Octadecanaminium, N,N-dimethyl-N- octadecyl-, chloride；dimethyldioctadecyl-ammoniu chloride；n,n-dimethyl-n-octadecyl-1-octadecanaminiu chloride；aliquat 207；arosurf ta 100；arquad r 40；dimethyldistearylammonium chloride；distearyl dimethylammonium chloride；distearyldimethylammonium chloride
分子式: C38H80N·Cl
分子量: 551.05
中文名称: N,N-二甲基二-N-1-十八碳氯化胺
英文名称: 1-Octadecanaminium, N,N-dimethyl-N- octadecyl-, chloride；dimethyldioctadecyl-ammoniu chloride；n,n-dimethyl-n-octadecyl-1-octadecanaminiu chloride；aliquat 207；arosurf ta 100；arquad r 40；dimethyldistearylammonium chloride；distearyl dimethylammonium chloride；distearyldimethylammonium chloride
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条