1) Gate charge
栅电荷
1.
In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.
为了更直观地描述低压大电流VDMOS器件特性,对器件栅电荷特性进行了测量和提取。
2.
This article provides a model for gate charge analysis,which is based on SOI RESURF LDMOS with trench.
栅电荷提供关于功率MOSFET的电容、驱动需求和开关功耗等信息,是衡量MOSFET性能的主要指标。
3.
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
2) gate-drain charge
栅-漏电荷
3) gate charge
栅极电荷
1.
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBT
本文就利用栅极电荷特性的考虑,介绍了一些计算用于开关IGBT的驱动器输出性能的方法。
4) grid charge holding
栅极电荷保持
5) grid charge transfer
栅极电荷转换
6) space charge grid tube
空间电荷栅极管
补充资料：X线滤线栅半径
X线滤线栅半径
放射学术语。又称栅-焦距。呈弧形排列的滤线栅铅条与充填物高度的延长线于空间聚焦为一点，此聚焦点到栅平面的垂直距离为栅-焦距。用于聚焦式滤线栅。栅-焦距有75、90、100、120、200cm 几种。使用聚焦式滤线栅时，原则
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条