1) atmospheric pressure chemical vapor deposition
常压化学汽相沉积
1.
This paper reports some investigation results about nanometer TiO x optical thin film prepared by atmospheric pressure chemical vapor deposition(APCVD),the influence of temperature on structure and refractive index of TiO x is discussed.
报道了用常压化学汽相沉积 (APCVD)工艺制备TiOx 纳米光学薄膜的研究结果 ,讨论了衬底温度对薄膜结构及折射率的影响 ,实验验证了太阳电池对光学减反射膜的理论要求 ,优化了工艺条件 ,制备的TiOx 纳米光学薄膜性能稳定 ,大面积颜色均匀一致。
2.
This paper reports some investigation results of nanometer TiOx optical thin film prepared by atmospheric pressure chemical vapor deposition(APCVD),analyzes the influence of temperature on constructure and refractive index of TiOx,the antireflection characteristics of TiOx deposited on polished wafers and textured wafers are dicussed,the optimal process is proposed.
报道用常压化学汽相沉积 (APCVD)工艺制备 Ti Ox纳米光学薄膜的研究结果 ,分析衬底温度对薄膜结构及折射率的影响 ,讨论在抛光硅片及绒面硅片上制备的 Ti Ox薄膜光学减反射特性 ,并优化了工艺条
2) chemical vapour deposition / piezoresistive effect
化学汽相沉积/压阻效应
3) high-pressure chemical vapor deposition(HPCVD)
高压化学汽相沉积
4) low-pressure chemical vapor deposition(LPCVD)
低压化学汽相沉积
5) APCVD
常压化学气相沉积
1.
Preparation of self-cleaning glass coated with TiO_2 on a float glass line by APCVD method
在线常压化学气相沉积方法制备TiO_2自洁薄膜玻璃(英文)
2.
TiN films were coated on glass substrates by atmospheric pressure chemical vapor deposition(APCVD) under different growth conditions,including different substrate temperatures and a gaseous mixture of varying chemical concentrations.
本研究以TiCl4和NH3为反应气体,N2为保护气氛,用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备得到了一系列不同反应温度和原料浓度的TiN薄膜。
3.
N-doped TiO_2 films were grown by atmospheric pressure chemical vapor deposition(APCVD) with TiCl_4 and NH_3 as precursors.
用常压化学气相沉积(APCVD)法,以四氯化钛(TiCl4)、氧气(O2)和氨气(NH3)作为气相反应先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。
6) atmospheric pressure chemical vapor deposition
常压化学气相沉积
1.
Titanium nitride(TiN)films were prepared by the atmospheric pressure chemical vapor deposition process using titanium tetrachloride and ammonia as reactive gases.
以TiCl4和NH3为原料,用常压化学气相沉积法在玻璃基板表面沉积得到了TiN薄膜。
2.
TiO_2/SnO_2:F composite films were deposited by atmospheric pressure chemical vapor deposition with Ti(OC_3H_7)_4 as pre- cursors and SnO_2:F coated glass as substrates.
以Ti(OC_3H_7)_4为先驱体,SnO_2:F镀膜玻璃为基板,采用常压化学气相沉积法制备了TiO_2/SnO_2:F复合薄膜。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条