1) Bulk etching rate
基体蚀刻速率
2) Etching rate
蚀刻速率
3) etching rate
刻蚀速率
1.
The etching rate and mechanism for quartz and BK7 glass in CF_4/CHF_3 as working gas were investigated as a function of gas composition, gas flowrate and RF bias voltage, and the results showed that the etching rate is in direct proprtion to the mean square root of RF bias voltage.
用CF4/CHF3作为工作气体对石英和BK 7玻璃进行了研究,分析了气体组分、气体流量和射频偏压等几种因素对刻蚀速率的影响,结果表明刻蚀速率与射频偏压的均方根成正比。
2.
In this paper, an investigation of the laser chemical etching of the Nickel-ironalloy(Ni=52%) in sodium nitrate solution by using a relatively low power Argon-ion laser hadbeen made, etching rates had been determined as a function of laser power and solution concent-ration, etching mechanism had been analysed.
利用氩离子激光,在较低的激光功率下,对铁镍合金(Ni=52％)在硝酸钠溶液中的激光化学刻蚀作了研究,给出了刻蚀速率与激光功率和溶液浓度之间的关系曲线,分析了刻蚀的机理。
3.
And the effects of these factors on etching rate and etching results were discussed and analyzed in detail.
实验中可以明显观察到刻蚀过程中的反应限制阶段与扩散限制阶段,说明经过长时间的刻蚀,HF酸的扩散效应将成为影响刻蚀速率的主导因素。
4) etch rate
刻蚀速率
1.
Isotropic chemical reaction etch plays major role in etch rate of Si when cathode temperature from 0℃ to 80℃,but in cryogenic etching(cathode temperatur.
7 Pa、11Pa时,基片温度的改变对其刻蚀速率的影响。
2.
The etch rate and mechanisms were measured and analyzed as a function of ion energy, ion beam density and ion incidence angle.
给出了离子能量、离子束流密度和离子束入射角等因素与刻蚀速率的关系曲线,用最小二乘法拟合了上述因素与刻蚀斜率的函数关系方程;分析了光刻胶和基片在刻蚀过程中随刻蚀深度的变化对图形转移精度的影响,用AFM的Tapping模式测量了刻蚀前后HfO2薄膜表面质量的变化。
3.
The etch rate and selectivity of Si and SiNx have been studied in SF6+Cl2 plasma by statistacl experiment method in this paper.
在相同的输出功率和压力的条件下,将Si和SiNx的刻蚀速率和选择比表示为SF6百分比含量的函数。
5) HF etch rate
HF蚀刻速率
6) ratio of etching rate
蚀刻速率比
补充资料：蚀刻速率
分子式：
CAS号：
性质：表征固体核径迹探测器被化学蚀刻蚀去的厚度与垂直入射带电粒子径迹半径的变化关系。典型的蚀刻曲线呈平缓变化的S形曲线，但其前段呈线性。
CAS号：
性质：表征固体核径迹探测器被化学蚀刻蚀去的厚度与垂直入射带电粒子径迹半径的变化关系。典型的蚀刻曲线呈平缓变化的S形曲线，但其前段呈线性。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条