1) reactive RF magnetron sputtering
反应射频磁控溅射
2) RF reactive magnetron sputtering
射频磁控反应溅射
1.
DLC:N thin films were deposited on Si(100) wafer substrate by RF reactive magnetron sputtering with a highly pure graphite target,where the gas mixture containing argon and nitrogen was used as sputtering gas.
采用射频磁控反应溅射法,Ar气为溅射气体,N2气为反应气体,用高纯石墨靶在Si(100)片上制备了掺氮类金刚石薄膜,采用X射线光电子能谱(XPS)、拉曼光谱(Raman)、扫描电子显微镜(SEM),表征了掺氮类金刚石薄膜的微观结构、表面及截面形貌。
2.
HfOxNy thin films were deposited by RF reactive magnetron sputtering on multi-spectral ZnS substrates at different oxygen partial pressure.
采用射频磁控反应溅射法在不同氧分压条件下制备了氮氧化铪薄膜,薄膜沉积过程在氧气、氮气和氩气的混合气氛中进行,所用衬底为多光谱硫化锌材料。
3) RF magnetron reactive sputtering
射频磁控反应溅射
1.
ZnO/AlN bilayers were deposited on Si(100) subtrate by RF magnetron reactive sputtering.
采用射频磁控反应溅射在Si(100)衬底上制备了ZnO/AlN双层膜。
2.
Al2O3 thin films are successfully deposited by RF magnetron reactive sputtering method on stainlesssteel and silicon wafer substrates.
采用射频磁控反应溅射法,以高纯Al为靶材,高纯O2为反应气体,在不锈钢和单晶Si基片上成功地制备了氧化铝A(l2O3)薄膜,并对氧化铝薄膜的沉积速率、结构和表面形貌进行了研究。
3.
The VO_x films were deposited on the glass substrates by using a RF magnetron reactive sputtering method with different O_2/Ar flow ratios at the same sputtering air pressure.
溅射总气压一定,通过改变氧氩气体的比例,用射频磁控反应溅射法在玻璃衬底上制备VO_x薄膜。
4) RF magnetron reaction sputtering
射频磁控反应溅射
1.
SiN thin film was prepared by RF magnetron reaction sputtering on glass with a mixture gas of N2 and Ar.
采用射频磁控反应溅射技术,以N2和Ar为反应气体在普通玻璃表面沉积了氮化硅(SiN)薄膜;利用X射线衍射仪、扫描电子显微镜、X射线能量耗散谱、台阶仪和紫外-可见光谱,研究了不同衬底温度对SiN薄膜的相结构、表面形貌和成分、薄膜厚度以及光性能的影响。
2.
SiN films were deposited by RF magnetron reaction sputtering technique using nitrogen and argon as the working gas on the substrate without heating.
采用射频磁控反应溅射法制备了氮化硅薄膜。
3.
The a-Si/SiNx superlattice was prepared by RF magnetron reaction sputtering technique and thermal annealing,which made Si nanocrystals appear in the a-Si films.
采用射频磁控反应溅射法制备a-Si/SiNx超晶格薄膜材料,热退火后形成纳米Si晶粒。
5) radio frequency magnetron reaction sputtering
射频磁控反应溅射
1.
In order to study passive Q-switch character of the nanoscale-Si-particle embedded in silicon nitride(nano-Si/SiNx)thin film,the film was prepared on single crystal silicon by means of radio frequency magnetron reaction sputtering technique and thermal annealing.
为了研究纳米硅镶嵌氮化硅薄膜材料的被动调Q特性,采用射频磁控反应溅射法结合热退火处理在单晶硅衬底上制备该薄膜,用该样品作为可饱和吸收体,在凹-平腔中实现了氙灯抽运Nd∶YAG激光器的被动调Q运转,在抽运重复频率1Hz情况下获得脉宽最小可达19ns的调Q单脉冲输出。
6) RF reactive sputtering
射频反应磁控溅射
1.
3μm/h by RF reactive sputtering.
采用射频反应磁控溅射制备了高C轴取向的AlN薄膜。
2.
The high-k dielectric HfOxNy films were prepared by rf reactive sputtering in oxygen and nitrogen surroundings.
采用射频反应磁控溅射法制备了HfOxNy栅介质薄膜,并研究了HfOxNy栅介质薄膜的化学特性和界面结构随淀积温度的变化而发生的变化规律。
3.
The high-k dielectric HfOxNy films were prepared by rf reactive sputtering of HfO2 target.
采用射频反应磁控溅射氧化铪钯的方法,在硅衬底成功制备了高介电HfOxNy薄膜。
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条