1) Single Quantum Well
单量子阱
1.
Research of InGaAs/AlGaAs/GaAs Single Quantum Well Lasers;
InGaAs/AlGaAs/GaAs单量子阱激光器的研究
2.
Piezomodulated-reflectivity study of GaAs/Al_(0.29)Ga_(0.71)As single quantum well;
压电调制反射光谱研究GaAs/Al_(0.29)Ga_(0.71)As单量子阱
3.
This paper presents some new results obtained recently in the study of single quantum well( SQW), seperate confinement structure (SCH) InGaAsP/GaAs lasers.
介绍了单量子阱 (SQW )分别限制异质结构 (SCH)的InGaAsP/GaAs半导体激光器所得到的最新成果。
2) SQW
单量子阱
1.
High Power Linear GRIN-SCH-SQW GaAs/AlGaAs Lasers;
高功率线性梯度折射率GaAs/AlGaAs单量子阱激光器
2.
Al-free SQW High-power Semiconductor Lasers;
基于无铝单量子阱的大功率半导体激光器
3.
Bistability of a SQW Semiconductor Laser with an Output-feedback Loss-modulation Scheme;
单量子阱半导体激光器在输出反馈损耗调制方式下的双稳特性
3) InAlAs/InGaAs single quantum well
InAlAs/InGaAs单量子阱
1.
Magneto-transport characteristics of two-dimensional electrongas for Si δ-doped InAlAs/InGaAs single quantum well;
单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性
4) SQW Laser
单量子阱激光器
1.
Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers;
808 nm In GaAsP-InP单量子阱激光器热特性研究
2.
The temperature dependence of lasing wavelength in 808nm InGaAsP SQW lasers is investigated in a heat-tight system.
采用自行设计的热封闭系统对808nmInGaAsP单量子阱激光器激射波长的温度依赖性进行了实验研究。
5) strained single quantum well
应变单量子阱
1.
Materials of InGaAs/GaAs/AlGaAs separate confinement heterostruc ture strained single quantum well were grown successfully by the technology of M etal Organic Chemical Vapor Deposition (MOCVD).
利用金属有机化合物气相淀积 ( MOCVD)技术成功生长了 In Ga As/Ga As/Al Ga As分别限制应变单量子阱材料 ,用该材料制成的单管半导体激光器在室温下连续波输出功率高达 2 。
6) ZnCdSe/ZnSe single quantum well
ZnCdSe/ZnSe单量子阱
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条