1) Molecular beam epitaxial Si
分子束外延硅
2) silicon molecular beam epitaxy
硅分子束外延
3) MBE
[英][,em bi: 'i:] [美]['ɛm 'bi 'i]
分子束外延
1.
PHOTOLUMINESCENCE STUDY ON MBE LOW TEMPERATURE GROWN GaAs;
低温下分子束外延生长GaAs的光致发光研究
2.
Studies of MBE-Grown ZnS_xSe_(1-x) Films for Liquid-Crystal-Light-Valve;
分子束外延生长液晶光阀用ZnS_xSe_(1-x)薄膜的研究
3.
The Study of HgCdTe on Si by MBE;
Si基大面积碲镉汞分子束外延研究
4) molecular beam epitaxy
分子束外延
1.
Structure and properties of InGaP/GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source;
分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能
2.
Photoluminescence study of (GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs bilayer quantum well grown by molecular beam epitaxy;
分子束外延生长的(GaAs_(1-x)Sb_x In_yGa_(1-y)As)GaAs量子阱光致发光谱研究
3.
Study on ultrahigh carbon -doped p -t ype InGaAs grown by gas source molecular beam epitaxy;
气态源分子束外延生长重碳掺杂p型InGaAs研究
5) Molecular beam epitaxy(MBE)
分子束外延
1.
This paper describes the Molecular Beam Epitaxy(MBE)technology and its applications in large area homogeneous super thin epilayers growth.
本文阐述了分子束外延（ ＭＢＥ） 技术的特点以及在实现大面积均匀的超薄外延层生长中的应用。
2.
The use of reflection high-energy electron diffraction(RHEED) has been proven to be a powerful tool to understand growth mechanisms of GaSb by molecular beam epitaxy(MBE).
采用分子束外延技术,在GaAs衬底上生长GaSb薄膜时,利用反射式高能电子衍射仪(RHEED)对衬底表面清洁状况、外延层厚度等进行在线监控。
3.
In order to get better property quantum dots(QDs) with longer wavelength,better uniformity and higher luminous efficiency,three types of InAs/GaAs QDs were researched and fabricated on GaAs(100)substrates by molecular beam epitaxy(MBE)technology through the S-K strained self-assembled mode.
为了获得波长长、均匀性好和发光效率高的量子点,采用分子束外延(MBE)技术和S-K应变自组装模式,在GaAs(100)衬底上研究生长了三种InAs量子点。
6) molecular beam epitaxy (MBE)
分子束外延
1.
The use of reflection high-energy electron diffraction (RHEED) intensity oscillations has proven to be a powerful tool to understand growth mechanisms of GaAs, AlAs and AlGaAs in molecular beam epitaxy (MBE).
采用分子束外延技术,在GaAs衬底上生长GaAs,AlAs和AlGaAs时,实现RHEED图像和RHEED强度振荡的实时监测已被证明是一种有效工具。
2.
The designed 940 nm wavelength laser structure has been obtained by successful molecular beam epitaxy (MBE) growth w.
设计的激光器外延结构采用分子束外延 (MBE)方法生长 ,成功获得具有较低激射阈值的 94 0nm波长激光器外延片。
3.
3μm InAs/GaAs quantum dots (QDs) laser Diodes have been grown by molecular beam epitaxy (MBE).
用分子束外延(MBE)生长了含应力缓冲层的InAs量子点激光器。
补充资料：分子束外延（molecularbeamepitaxy(MBE)）
分子束外延（molecularbeamepitaxy(MBE)）
分子束外延是一种超高真空条件下的物理气相淀积方法。其工作原理是在超高真空系统中，使分子或原子束连续不断地撞击到被加热的衬底表面上而获得均匀外延层。在分子束外延过程中，各种成分的束强度可以分别控制。分子束外延的特点是生长速率相当低，典型的为0.1～0.2μm/h，因而能精细控制生长层的厚度，可以生长极薄的外延层。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条