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1)  recombination current
复合电流
1.
Based on the studying of the AlGaAs/GaAs HBT E M model DC parameters which we have done, the base currents of the HBT are studied, and especially, the B E junction space charge region(SCR) recombination currents and the base surface recombination currents are calculated, which are important components of the base currents at a small DC base.
在AlGaAs/GaAsHBTEM模型直流参数的研究基础上,对HBT的基区电流进行了研究,特别是针对BE结空间电荷区的复合电流和基区表面复合电流,因为在HBT的小偏置情况下,HBT的BE结空间电荷区的复合电流和基区表面复合电流在整个基区电流中占有主导地位。
2)  EMR fluids
电磁复合流变
1.
Instrument for measuring the yield stress of ER, MR and EMR fluids;
电、磁流变及电磁复合流变测试装置
3)  recombination current density
复合电流密度
1.
In particular, the dependence of cell recombination current density on the material parameters Fh , Fe and the dependence of the electric field in hole transport layer(HTL) and electro.
研究了材料参数Fh,Fe对器件复合电流密度的影响及空穴输运层厚度和载流子迁移率对器件电场强度和复合电流密度的影响。
4)  com pound current filter
复合电流滤过器
5)  Reunite to control the electric current wreath
复合控制电流环
6)  composite ER fluid
复合电流变液
补充资料:标准冲击电流波形(见冲击电流发生器)


标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form

  blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条