2) silicon sheets from powder
多晶硅带衬底
3) Si substrate
硅衬底
1.
The humidity sensor is fabricated with nanometer BaTiO3 film on Si substrate.
用硬脂酸盐法合成纳米钛酸钡材料,丝网印刷法将纳米钛酸钡涂在硅衬底上制成电阻式湿敏元件。
4) Silicon substrate
硅衬底
1.
GaN/Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost,high thermal conductivity,potential applications in the integration of the microelectronics and opto- electronics,mature technology in growth of Si single crystal with large diameter.
介绍了 GaN 薄膜开裂问题及近期硅衬底 GaN 基 LED 的研究进展。
2.
The dynamical process of CMP used in silicon substrate in ULSI is analyzed,and a new viewpoint is put forward.
在分析 UL SI中硅衬底 CMP的动力学过程基础上 ,提出了在机械研磨去除产物过程中 ,适当增强化学作用可显著改善产物的质量传输过程 ,从而提高抛光效率 。
3.
A simple method to synthesize single crystal silicon nanowires(SiNWs)on the iron-deposided silicon substrate by a catalytic(0.
采用以硅衬底为硅源的简单方法,在蘸有一层催化剂(0。
5) Si(100) substrate
硅(100)衬底
6) Substrate orientation
衬底晶向
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条