1) Net impurity concentration
净杂质浓度
2) Impurity concentration
杂质浓度
1.
The impurity concentration distribution in diode p-n junction can be presented with the simplified models,named as abrupt junction and the linearly graded junction,but precise measurements show there existing limitation in these tradition models.
简化的突变结或线性缓变结模型已能很好地近似二极管p-n结杂质浓度分布规律,但从精密的实验测量结果中发现传统模型存在局限性。
2.
The universal form of power-low is formulated from Passion equation for impurity concentration distribution in diode p-n junction.
基于杂质浓度分布的突变结或线性缓变结模型,二极管p-n结(电)容—(电)压关系可简单地由C-V幂律描述。
3) Surface Dopant Concentration
表面杂质浓度
5) channel doping density
沟道杂质浓度
1.
Simulation study of the influence of the channel doping density on the characteristics of the deep sub micron grooved gate PMOSFET;
槽栅PMOSFET沟道杂质浓度对其特性影响
2.
Based on the hydrodynamic energy transport model, the short channel effect immunity in the deep sub micron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity.
基于流体动力学能量输运模型 ,首先研究了槽栅器件对短沟道效应的抑制作用 ,接着研究了不同衬底和沟道杂质浓度的深亚微米槽栅PMOSFET对短沟道效应抑制的影响 ,同时与相应平面器件的特性进行了对比 。
6) substrate doping density
衬底杂质浓度
1.
Based on the hydrodynamic energy transport model, the influence of substrate doping density on performance for deep sub micron grooved gate PMOSFET is studied using two dimensional device simulator MEDICI and is compared to that of the counterpart conventional planar device.
研究发现 ,随着衬底掺杂浓度的提高 ,与平面器件相同 ,槽栅器件的阈值电压提高 ,漏极驱动能力降低 ,抗热载流子能力急剧退化 ;但与平面器件相比 ,槽栅器件的阈值电压受衬底杂质浓度影响较小 ;漏极驱动能力及抗热载流子性能随衬底杂质浓度提高的退化则较平面器件小得
补充资料：不净计净
【不净计净】
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不净计净者，谓己身、他身，具有五种不净。凡夫不了，妄生贪着，执以为净，即成净颠倒。（已上四计，是凡夫四倒。五种不净者，种子不净、住处不净、自体不净、外相不净、究竟不净也。）
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