The dependence of the effective barrier spike at the B-C junction and the I-V characteristics of the DHBT on the thickness and doping density of the n~+-InP composite collector are analyzed theoretically.

Effect of ionic vacancies on potential barrier at grain boundaries in BaTiO_3.;

How to analyze particle wavefunction of tunneling rectangular potential barrier——On an alteration in the new printing of Atomic Physics by Professor Chu Shenglin;

The results show that the probability crossing cell membrane is influenced by the ion-energy in the cell membrane channel, height and width of the barrier.

The field emission of diamond film involves the electrons travel from the negative end of the power supply, through the various interfacial contacts, through the bulk of the film itself, to the film surface,then tunnel through the potential barrier,propagate through the vacuum gap, before finally reaching the anode.

The form of MgSO\-4 dosing in varistor ceramic lattice as shown in microtexture graph and its effect on ZnO crystal barrier is briefly analyzed.

In this article,the authors analyze the aiguille voltage of the whole-bridge DC source converter circuit according to the mathematics model when the MOSFET transistor is shut and the instant voltage equations are obtained.

For this reason,this paper base actual data of the essence characteristic, to discuss calculate formula VaR means in the the aiguille and fat tail branch, and make use of the calculate formula to carry out demonstration analysis for the stock market.