1) 300mm CZ silicon wafer
300mm CZ硅片
2) 300 mm silicon wafer
300mm硅片
1.
The subsurface damage depth measurement of double side grinding of 300 mm silicon wafer can not only give a correct basis for process improvement and reduce the subsurface damage depth of double side grinding,but also help reduce polishing time to improve geometry parameter of polished wafer.
本文应用恒定腐蚀法和双晶衍射法测量了300mm硅片双面磨削工艺后的损伤层厚度,对恒定腐蚀法进行了较深入的研究,并结合恒定腐蚀法的结果对硅片进行双晶衍射。
2.
A motion model based on the analysis of mathematical modeling was established to study motion path in double-sided polishing process for 300 mm silicon wafers.
优化四个转速,可以显著改善300mm硅片表面的平整度和局部平整度。
3) mm silicon single crystal
300mm硅单晶
4) 300 mm wafer
300mm圆片
6) 300 mm
300mm
1.
Numerical Analysis of Thermal Elastic Stress During 300 mm Silicon Crystal Growth Process;
300mm硅单晶生长过程中热弹性应力的数值分析
2.
Effects of Nitrogen on Oxidation-Induced Stacking Faults in 300 mm CZ Silicon
300mm直拉单晶硅中的氮元素对氧化诱生层错的影响
补充资料：φ300mm-L1000mm真空自耗炉(北京钢铁研究总院)
φ300mm-L1000mm真空自耗炉(北京钢铁研究总院)
。00mm_LIO00mm真空自耗炉(;匕京钢铁研究总院)哪
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条