1) hole-blocking characteristics
空穴阻挡特性
1.
The hole-blocking characteristics and luminescent properties of organic light emitting materials DPVBi were discussed.
本文利用DPVBi的空穴阻挡特性和发光特性制作了一个白光器件。
2.
The hole-blocking characteristics of organic light emitting materials DPVBi were discussed.
讨论了有机发光材料4,4-′b is(2,2-′d iphenyl vinyl)-1,1-′b iphenyl(DPVB i),在结构为ITO/N,N-′b is-(1-naphthyl)-N,N-′d iphenyl-1,1-′b iphenyl-4,4-′d iam ine(NPB)/DPVB i/tris-(8-hydroxyqu inoline)alum inum(A lq3)/L iF/A l的有机电致发光器件中所表现出来的空穴阻挡特性。
2) hole blocking
阻挡空穴
4) hole blocking layer
空穴阻挡层
1.
The doping concentration between the host and guest and the thickness of hole blocking layer BCP on the the properties of light-emitting devices were separately studied.
分别研究了主客体掺杂浓度和空穴阻挡层BCP的厚度对器件发光性能的影响,当掺杂浓度为8%时,主客体间的能量传转移最充分,器件的启亮电压为5V,器件在20V时的亮度为7122。
5) hole-blocking materials
空穴阻挡材料
1.
We have fabricated white organic light-emitting devices (WOLEDs) using Alq3,TPBi and BCP as different electron-transporting and hole-blocking materials,respectively.
采用Alq3、TPBi和BCP分别作为电子传输材料和空穴阻挡材料,制备了三种器件,研究了用不同的空穴阻挡材料对器件性能的影响。
6) diffusion barrier property
阻挡特性
1.
The surface morphology and properties of the thin-films were investigated by four-point probe(FPP)sheet resistance measurement, AFM,SEM,Alpha-step IQ profilers and XRD,also the effects of N and AI doping on diffusion barrier property were discussed.
实验结果表明,Ta、Ta-N和Ta-Al-N膜层的Cu扩散阻挡特性逐渐增强,Ta/Si界面上的反应和Cu通过多晶Ta膜扩散到Si底并形成Cu_3Si共同导致了Ta阻挡层的失效,而Cu通过Ta-N和Ta-Al-N结晶后产生的晶界扩散到Si底并形成Cu_3Si是两者失效的唯一机制。
补充资料：阻挡
1.阻止﹔拦住。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条