1) InGaAs APD
InGaAs雪崩光电二极管
1.
The chip of the four-quadrant InGaAs APD in this paper is designed in a frontal incident planar structure and its material part is an SAGM APD.
文章中设计的四象限InGaAs雪崩光电二极管(Avalanche Photo Diode,APD)的管芯结构采用正入光式平面型结构,而材料结构采用吸收区、倍增区渐变分离的APD结构,在对响应时间、暗电流和响应度等参数进行计算与分析的基础上,优化了器件结构参数。
2) InGaAs/InP APD detector
InGaAs/InP雪崩光电二极管探测器
3) APD
雪崩光电二极管
1.
Implementation of Compensation for Bias Voltage of Thermo-drift for APDs by Using AC1056;
用AC1056实现对雪崩光电二极管温漂的偏压补偿
2.
In order to implement dynamic bias voltage compensation for the thermal drift of APD gain,high precision A/D and D/A circuits are designed.
为实现对雪崩光电二极管(APD)增益温漂的动态偏压补偿,设计了高精度的ADC和DAC电路系统,对APD可以达到毫伏级的偏压控制精度和0。
3.
This paper discusses a new kind of detecting system for bioluminescence which based on APD.
本文介绍了一种基于雪崩光电二极管的生物发光检测仪器新方案,并与传统的微光测量方案和器件进行了比较。
4) avalanche photodiode(APD)
雪崩光电二极管
1.
In order to ensure the optimum operating of the avalanche photodiode(APD) in the laser gyro under different temperature conditions,an effect of the temperature on the avalanche gain is analyzed based on the principle of APD multiplication.
为保证激光陀螺中雪崩光电二极管(APD)在温度变化的情况下始终处于最佳工作状态,从APD的倍增机理出发,分析了温度对雪崩增益的影响,建立了虚警率与APD倍增因子的数学模型,并采用监测雪崩噪声平均过阈率的方法,得到器件的实际击穿电压温度系数γ=6。
2.
The edge pre-breakdown of planar-type avalanche photodiode(APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场,导致在结边缘的提前击穿。
3.
According to the requirements and the characteristics of the single-photon detect System,a water-cooling system based on thermoelectricity cooling accompanied by a temperature control instrument was developed to reduce the temperature of the detector avalanche photodiode(APD).
根据单光子探测系统的要求及其特点,采用半导体制冷技术,研制出了用于单光子探测的雪崩光电二极管(APD)的水循环散热制冷腔。
5) avalanche photodiode
雪崩光电二极管
1.
Study on application of avalanche photodiode in phase laser distance measurement;
雪崩光电二极管在相位式激光测距仪中的应用
2.
Status of HgCdTe avalanche photodiode arrays
碲镉汞雪崩光电二极管发展现状
3.
An InGaAs/InAlAs avalanche photodiode(APD) with the back illumination is designed and simulated by the MEDICI software.
设计了一种InGaAs/InAlAs雪崩光电二极管(APD),并利用MEDICI软件进行了模拟仿真。
6) avalanche photodiodes
雪崩光电二极管
1.
A measurement system is set up which could measure static optoelectronic characteristics of avalanche photodiodes (APDs).
利用该系统对光敏面的直径为500μm的台面型InGaAs/InP雪崩光电二极管(APDs)进行测试。
2.
The development of GaN-based avalanche photodiodes was reviewed in this letter.
文章简单回顾了氮化镓基雪崩光电二极管的发展现状,从制作高响应率、低漏电流的雪崩器件出发,详细阐明了制作氮化镓基雪崩光电二极管的工艺过程,特别考虑了干法刻蚀带来的物理损伤以及后续的消除损伤处理。
3.
Based on the characteristic of PIN avalanche photodiodes and carrier rate equations,a mathematic model is presented.
针对PIN雪崩光电二极管结构的特殊性,以载流子速率方程为基础,进行适当的假设和拟合,将光、电子量和转化过程完全用数学模型表示,并在Matlab中进行了模拟计算,其结果与实验数据符合较好。
补充资料：一极
【一极】
（术语）一实至极之道。至理不二故曰一。无量义经序曰：“一极正觉，任机而通。”三论玄义曰：“法华会三乘，同归一极。”止观义例上曰：“若异若同，同入一极。”
（术语）一实至极之道。至理不二故曰一。无量义经序曰：“一极正觉，任机而通。”三论玄义曰：“法华会三乘，同归一极。”止观义例上曰：“若异若同，同入一极。”
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条