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1)  Si-based semiconductor device
Si基半导体器件
2)  Si-based DMS(diluted magnetic semiconductor)
Si基稀磁半导体
3)  Semiconductor devices
半导体器件
1.
Accelerators simulation experiment on single event effects in semiconductor devices;
半导体器件单粒子效应的加速器模拟实验
2.
In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P~+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed.
为提高硅半导体器件的正向导电特性,文中对器件浓硼扩散、磷扩散和烧结铝电极后P~+-P区掺杂浓度分布、少子寿命等因素的影响进行了实验研究。
3.
They have extensive application prospect in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.
GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。
4)  semiconductor device
半导体器件
1.
Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method;
半导体器件动力模型的有限元法仿真与分析
2.
Research for incompetent sources of semiconductor devices which are not up to the standard in DPA;
半导体器件DPA不合格的根源研究
3.
A Galerkin-MMOCAA scheme for a semiconductor device simulation behavior of a semiconductor device;
一类半导体器件模拟的Galerkin-MMOCAA方法
5)  Si-based diluted magnetic semiconductor(DMS)
Si基稀磁半导体(DMS)
6)  Si(Au) surface-barrier semiconductor detector
Si(Au)面垒半导体探测器
补充资料:半导体导电性(见半导体的导电与电荷输运)


半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor

  半导体导电性eleetr、ea一conou以,v:‘,_‘ 一J一“。,瓜米早伙鼓幕由乌教着给话_
  
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