1)  FRAM
铁电存储器(FRAM)
2)  ferroelectric
铁电
1.
Preparation and characterization of LiNbO_3 ferroelectric films;
铌酸锂铁电薄膜的制备与表征
2.
Microstructures and Ferroelectric Properties of Ba_(0.6)Sr_(0.4)TiO_3 Thin Films;
Ba_(0.6)Sr_(0.4)TiO_3薄膜的微结构及铁电性能研究
3.
The ferroelectric and dielectric properties of Sr_2Bi_(4-x/3)Ti_(5-x)Nb_xO_(18) ceramics;
Sr_2Bi_(4-x/3)Ti_(5-x)Nb_xO_(18)陶瓷的铁电介电性能
3)  ferroelectrics
铁电
1.
The working principles and characteristics of ferroelectrics memory devices are introduced, with emphasis on the description of technological difficulties that prevent the development of ferroelectrics memory technology and the discussion of the mechanism of the fatigue of ferroelectrics thin films.
简要说明了铁电随机存储器的工作原理及特点 ,详细阐述了阻碍铁电存储技术发展的技术难点 ,重点讨论了铁电薄膜材料的疲劳机理 ,并对铁电存储器的发展作了展
2.
Recently, ferroelectrics materials have been investigated intensively in the condensed physics and solid-state electronics fields.
近年来,铁电材料及其应用研究已成为凝聚态物理、固体电子学领域的热门课题。
4)  ferroelectric-antiferroelectric phase boundary
铁电-反铁电相界
5)  antiferroelectric-ferroelectric boundary
反铁电-铁电相界
6)  antiferroelectric ferroelec tric ceramics
反铁电-铁电陶瓷
参考词条
补充资料:随机存取存储器(见半导体存储器)


随机存取存储器(见半导体存储器)
random access memory,RAM

s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。