1) p buried layer
p埋层
1.
A novel bulk-silicon surface implanted device with a p buried layer is proposed,and an analytical model for the surface electrical field distributions and breakdown voltage is developed.
提出一种带p埋层的表面注入硅基LDMOS高压器件新结构,称为BSI LDMOS(surface implanted LDMOS with pburied layer)。
2) buried layer
埋层
1.
Study on the Ge buried layer modulated crystallization in Ge/Si multilayer films;
Ge/Si纳米多层膜的埋层调制结晶研究
2.
Structure study of SiC buried layer by high temperature C~+ implantation;
高温碳离子注入形成碳化硅埋层的结构研究
3.
The measurement method of pattern shift during buried layer epitaxial process was synthetically introduced,including angular lapping stain method and measuring a ratio between the line width of a linear pattern vertical to the orientation flat and line width of a linear pattern parallel to the orientaiton flat.
给出了图形漂移的定义,综合介绍了埋层外延中图形漂移的监测方法,其中包括常规的磨角染色法和无损伤测量垂直和平行于参考面两个方向上图形线宽的变化比例法。
3) DFB (distributed Feedback)
P型衬底平面埋层异质结构(PFBH)
4) p-layer
P层
1.
Impacts of hydrogenated nanocrystalline silicon (nc-Si:H) p-layer have been investigated on the photovoltaic parameters, especially the open circuit voltage (V_(oc)) of n-i-p type hydrogenated amorphous silicon (a-Si: H) solar cells.
本文报道纳米硅P层对n-i-p型非晶硅(a-Si:H)电池性能特别是开路电压(V_(oc))的影响。
5) Buried Double p-n Junction(BDJ)
掩埋双p-n结
6) shallow seam
浅埋煤层
1.
Simulating of determining reasonable working resistance of support in shallow seam of thick clay layers;
浅埋煤层工作面合理阻力支架选型相似模拟实验研究
2.
Post-buckling behavior for roof strata in shallow seam longwall mining;
浅埋煤层长壁开采顶板岩层的后屈曲性态
3.
Study on catastrophe mechanism for roof strata in shallow seam longwall mining;
浅埋煤层长壁开采顶板岩层灾害机理研究
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