1) GaAsP/GaInP tensile-strained quantum well
GaAsP/GaInP张应变量子阱
2) InGaAs/GaAsP quantum well
InGaAs/GaAsP量子阱
3) AlGaInP/GaInP quantum well
AlGaInP/GaInP量子阱
4) AlGaInP/GaInP MQW
AlGaInP/GaInP多量子阱
5) GaAsP/AlGaAs quantum-well laser
GaAsP/AlGaAs量子阱激光器
6) strained quantum well
应变量子阱
1.
Effect of Auger recombination on the threshold current of strained quantum well laser;
俄歇复合对应变量子阱激光器阂值电流的影响
2.
using gigh purity sources of - metals,We got the high quality Al Ga In As/ In P strained quantum well,with little oxide concentration,large intensity of PL (PL =0 .
用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 。
3.
7dB noise figure of SOA coupled with fiber directly in both ends under 130mA bias current shows that the noise figure is improved by strained quantum well structure.
研究了直接耦合混合应变量子阱 Ｓ Ｏ Ａ 的噪声特性。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条