1) voltage-controlled frequency deviation
压控频偏
1.
Then the parameters design of crystal and capacitance variable diode is discussed in detail to achieve the required voltage-controlled frequency deviation and linearity performance.
简要介绍了压控晶体振荡器的工作原理,说明了晶体谐振器与变容二极管在压控晶振中起的关键作用,以及如何根据实际情况选择合适的晶体谐振器和变容二极管以实现相应的压控频偏和压控线性。
2) RF bias voltage
射频偏压
1.
In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.
对于上下电极双射频源的电感耦合(ICP)等离子体刻蚀设备的关键工艺参数——下电极射频偏压的变化特性进行了实验与物理定性分析。
3) hf biasing
高频偏压
4) Bias Control
偏压控制
1.
An Avalanche Photodiode Bias Control Circuit;
雪崩光电管偏压控制电路的研制
2.
The Design of the Circuit for APD Bias Control Base on FPGA;
基于FPGA的光电倍增管APD偏压控制电路设计
3.
In this paper,a scheme for removing the shift of bias control points is presented on the basis of analyzing the principle and process of the shift and the automatic switchover of the control mode can be realized for the bias control in the conventional mode by increasing the Multipoint Control Units(MCU).
文章通过对偏压控制点产生偏移的原理和过程进行分析,提出了解决偏压控制点偏移的方法。
5) numeric control bias
数控偏压
1.
Based on the principle of false alarm control,a numeric control bias circuit auto tracing the avalanche breakdown voltage is designed.
基于偏压的虚警控制原理 ,设计了一种自动跟踪雪崩管击穿电压的数控偏压电路 ,该电路不仅使偏压的建立速度和控制精度得到较大提高 ,而且适用于背景光强和环境温度大幅度变化的连续探测的光电系统。
6) RF self-bias
射频自偏压
1.
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法,控制基片电极的射频自偏压。
补充资料：控压
1.犹控制。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条