说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 词典 -> 边界陷阱
1)  border traps
边界陷阱
1.
The timing characteristics of random telegraph signal (RTS) in deep submicron MOS devices are investigated,and a novel method is proposed to determine the spatial distribution of the border traps by forward and backward RTS measurements in the non-saturation state.
强场诱生并与电场奇异性相关的边界陷阱是影响深亚微米MOS器件可靠性的关键因素之一。
2)  border-trap
边界陷阱电荷
3)  interface trap
界面陷阱
1.
Study of conductive property for a N-VDMOS interface trap under X-ray radiation;
一种N沟VDMOS电离辐射界面陷阱电流传导性研究
2.
Study on avalanche hot-electron injection of interface trap characteristic for thin film in nanometre range formed by PECVD;
PECVD形成纳米级薄膜界面陷阱特性的雪崩热电子注入研究
3.
This paper studies the interface trap features of novel thin rapid thermal nitrided SiOxNy film by the technique of avalanche hot-electron injection and the measurements of high frequency C-V and (luasi-static C-V characteristics.
采用雪崩热电子注入技术和高频C-V及准静态C-V特性测试,研究了新型快速热氨化的SiOxNy介质膜界面陷阱的特征,侧重于研究界面陷阱的特性与分布。
4)  interface traps
界面陷阱
1.
Based on the two-step interface trap buildup model and the statistical thermodynamics mechanism of point defects in solids, a relation between the radiation induced increase of oxide hole-traps and the buildup of interface traps in MOSFET is proposed.
基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式。
2.
Two-dimensional device simulating software MEDICI was used to establish the structure model and physical model of an n-channel 6H-SiC MOSFET with interface traps having a exponential distribution.
利用二维器件仿真软件 MEDICI建立了具有指数分布界面陷阱的 n沟 6H-Si C场效应晶体管的结构模型和物理模型 ,通过模拟研究 ,分析和讨论了界面陷阱对器件阈值电压、跨导及其温度特性的影响。
3.
A new experimental technique namely the linear cofactor difference sub-threshold voltage method is presented in this paper for extraction of the MOSFET interface traps induced by the gate oxide stress test and verified on N-MOSFETs.
本文提出了用线性余因子差分亚阈电压峰测量电应力诱生MOSFET界面陷阱的新技术并进行了实验验证 。
5)  interface trap states
界面陷阱态
1.
Study of interface trap states of AlN-Si(111) heterostructure;
AlN-Si(111)异质结构界面陷阱态研究
6)  Boundary Error
边界缺陷
1.
An Effective Algorithm Repairing STL File Based on Boundary Errors;
一种基于边界缺陷的STL文件修补算法
补充资料:流动性偏好陷阱或凯恩斯陷阱(Keynes trap)

流动性偏好陷阱或凯恩斯陷阱(Keynes trap):当利率极低,人们会认为这种利率不大可能再降,或者说有价证券市场价格不大可能上升而只会跌落时,人们不管有多少货币都愿意持在手中,这种情况被称为%26#8220;凯恩斯陷阱%26#8221;或%26#8220;流动偏好陷阱%26#8221;。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条