1) dielectric spectrum
介电光谱
1.
It is found that:(1) the reflective index is firstly enhanced and then reduced with the increase of incident wavelength,and the reflective spectrum exhibits a tendency of collapse with the increase of porosity;(2) the porous silicon dielectric spectrum is bmue-shifted and the real and imaginary parts are reduced with the increase of.
采用改进过的Maxwell-Garnett模型研究了入射光波长和多孔硅的孔隙率对反射光谱和介电光谱的影响,结果表明:(1)随着入射光波长的增大,多孔硅的反射率先增大后减小,而随着孔隙率的增大反射光谱出现了明显的下塌趋势,且孔隙率越大下塌得越明显;(2)随着孔隙率的增加,多孔硅复介电光谱出现明显的蓝移现象,且多孔硅有效介电常数的实部和虚部均变小。
2.
It was found that (1) the reflection index was enhanced first and then reduced with increasing incidence wavelength and the reflection spectrum emerged a tendency of collapse with increasing porosity, and (2) the porous silicon dielectric spectrum was blue-shifted and the real part and imaginary part reduced with increasing porosity.
采用改进过的Maxwell-Gamett模型研究了入射光波长和多孔硅的孔隙率对反射光谱和介电光谱的影响,结果表明:(1)随着入射光波长的增大,多孔硅的反射率先增大后减小,而随着孔隙率的增大反射光谱出现了明显的下榻趋势,且孔隙率越大下榻得越明显;(2)随着孔隙率的增加,多孔硅复介电光谱出现明显的蓝移现象,且多孔硅有效介电常数的实部和虚部均变小。
2) relaxation,spectra of dielectric
介电常数的松弛光谱
3) dielectric spectroscopy
介电谱
1.
Numerical simulation of the dielectric spectroscopy of multi-layer composite systems
层状复合体系介电谱的数值模拟
2.
Study of intrinsic defects in ZnO varistor ceramics by dielectric spectroscopy
ZnO压敏陶瓷中缺陷的介电谱研究
3.
The validity for investigating membrane-solution systems by using dielectric spectroscopy was logically demonstrated.
就“介电谱方法研究膜体系的有效性”这一问题进行了展开性的阐述:扼要地介绍了以等效回路为基础的膜-液体系基本介电模型和包含电性质分布区域的多层膜介电模型,并以纳滤膜体系为例简要论证了以该模型和介电理论为基础的介电谱解析方法对原位获取内部信息的有效性。
4) dielectric spectrum
介电谱
1.
Development of temperature monitoring and dielectric spectrum measurement system based on LabVIEW;
基于LabVIEW的温度监控与介电谱测试系统研制
2.
The experimental data of the dielectric spectrum of water has been fitted to a theoretical formula with which the correlation function is calculated.
将水的介电谱实验数据拟合进而得到介电常数理论公式,并基于此计算了相关函数。
3.
74) ceramics were prepared by conventional solid state reaction method,and the dielectric spectrum of BST ceramics in broad frequencies was measured.
测量了样品的宽频段介电谱,发现钛酸锶钡的超低频介电谱在复介电常数平面上给出一段圆弧;但是,在高于5 Hz时偏离圆弧组成一段直线。
5) dielectric spectra
介电谱
1.
In this paper thin glass is strengthened in two kinds of liquid and measurement method of dielectric spectra on the toughened glass is presented so as to study the relationship between dielectric behavior and strength of the tempered glass.
采用双液法钢化薄玻璃,并提出玻璃表面介电谱测量法。
2.
The dielectric spectra of undecatungstogalloindic acid with solid film under different temperatures are investigated over the broad frequency region 40Hz-110MH,and two dielectric relaxations were found.
11H2O在40Hz-110MHz频率范围的介电谱,发现这些谱都是由两个弛豫过程表征的,分别是由于材料内部粒子表面对离子电荷移动和粒子间界面极化产生的。
6) C-T and tgδ-T
介电温谱
1.
The curves of C-T and tgδ-T for th.
介电温谱测试表明,随着温度的升高,梯度薄膜出现一个铁电-铁电相变点和两个居里点,同时出现一定的频率弥散现象。
补充资料：复介电常数
复介电常数
complex dielectric constant
倒￡“ED(t)=“(田)及cos田t+￡，，(留)凡sin山t(1)相角子，即式中:/(。卜会cos“(。)，:。(。卜会sin“(。)(2)tg占=损耗电流11_f充电电流Ic一万 (7)即在交变电场下，D(t)和E(t)的关系要用两个物理量口和了来表征。上式中，相位占和了、了都是频率的函数，且与温度和电介质结构密切相关。 D(t)可分解为两个分量:一个与E同相位，另一与E有90。相位差。如将上述关系用复数表示，且令君*=Eoe，“‘，D*=Doej(“一泞)，则刀‘与E*的关系可表示为 D*(t)=‘*(臼)E*(t)(3)在式中引入复数介电常数扩=了一j已，则 二(田卜;斜一会一‘一‘(田卜j一‘。，“， 静态时，。=0、占=0。即￡，，=O，式(3)可表示为D=二，(0)E，其中￡，(O)即为静态介电常数￡s。可见，g(。)是静态介电常数在交变场下的推广，e’(。)称为频率依赖的介电常数。 动态时，在真空电容器中，电流虽然超前电场二/2，但由于占=0，而不产生损耗;故在具有介电常数的电容器中，单位时间、单位体积中损耗的能量评，可由E及与E同相的电流分量。扩E的乘积表示，即]。“E图1电介质中交流电场E 与电流I的矢量图部和虚部表示，而弛豫时间为 根据复介电常数定 义，由式(4)并经简化 处理后可得 ￡*(臼)=￡‘(臼)一j￡“ 6二一己。/。、 t田】=E。十二~一，犷一一~气己少 1一」田T 上式称为德拜公式，用 来表征复介电常数的频 率特性。如将其分成实:时，则得已=昆+65一三.l+田2r2(￡。一氛)田T1十田2丁2 已，，tg口一=万，二 Q(‘s一几)田丁￡s+氛田2丁2 (9)(10)(11)W一晋DOEOS‘n“一晋“‘“一‘E’“‘g“(5，合(￡·l一(去‘一‘。210 10()四T由于了的变化不大，因而能量损耗与复介电常数的虚部已成正比。式(4)中了(动称为介质的损耗因子。式(5)中占称为介质损耗角，tg沙称为介质损耗角正切或介电耗散因子。 在交流电路中，若置介质于平板电容器中，并在两极间外加交流电压V V=Voej“。.，_L一~~，卜。尸。
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参考词条